Philips PBSS4540Z Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, halfpage

M3D087

PBSS4540Z

NPN medium power transistor

Preliminary specification 1999 Aug 04

Philips Semiconductors Preliminary specification

NPN medium power transistor PBSS4540Z

FEATURES

• High current (max. 10 A)

• Low voltage (max. 40 V)

• Low V

CEsat

.

APPLICATIONS

• Heavy duty battery powered equipment (Automotive,
Telecom and Audio/Video) such as motor and lamp
drivers

• V

critical applications such as the latest low supply

CEsat

voltage IC applications

• All battery driven equipment to save battery power.

DESCRIPTION

NPN low V

transistor in a SOT223 plastic package.

CEsat

PNP complement: PBSS5540Z.

MARKING CODE

TYPE NUMBER MARKING CODE

PBSS4540Z PB4540

PINNING

PIN DESCRIPTION

1 base
2 collector
3 emitter
4 collector

handbook, halfpage

123

Top view

4

1

MAM287

Fig.1 Simplified outline (SOT223) and symbol.

2, 4

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 5A
peak collector current − 10 A
peak base current − 2A
total power dissipation T

≤ 25 °C; note 1 − 1.35 W

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

2

1. Devicemountedonaprinted-circuitboard,single-sidedcopper,tinplated,mounting pad for collector 1 cm

mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated Handbook”.

.Forother

1999 Aug 04 2

Philips Semiconductors Preliminary specification

NPN medium power transistor PBSS4540Z

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

Note

1. Devicemountedonaprinted-circuitboard,single-sidedcopper,tinplated,mounting pad for collector 1 cm

mounting conditions, see

CHARACTERISTICS

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BEon

C

c

f

T

thermal resistance from junction to ambient note 1 92 K/W

2

.Forother

“Thermal considerations for SOT223 in the General Part of associated Handbook”.

collector cut-off current IE= 0; VCB=30V −−100 nA

I

= 0; VCB=30V; Tj= 150 °C −−50 µA

E

emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain VCE=2V

I

= 500 mA 300 500 −

C

= 1 A; note 1 300 500 −

I

C

I

= 2 A; note 1 250 450 −

C

I

= 5 A; note 1 50 150 −

C

saturation voltage IC= 500 mA; IB=5mA − 65 120 mV

I

= 1 A; IB=10mA − 100 150 mV

C

I

= 2 A; IB= 200 mA; note 1 − 130 170 mV

C

I

= 5 A; IB= 500 mA; note 1 − 300 400 mV

C

saturation voltage IC= 5 A; IB= 500 mA; note 1 − 1.1 1.3 V
base-emitter turn-on voltage IC= 2 A; VCE= 2 V 1.1 0.8 − V
collector capacitance IE=ie= 0; VCB=10V; f=1MHz − 60 70 pF
transition frequency IC= 500 mA; VCE= 5 V; f = 100 MHz 80 120 − MHz

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

1999 Aug 04 3