Philips PBSS4350SA Technical data
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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
PBSS4350SA
50 V low V
Objective specification 2002 Oct 22
CEsat
NPN transistor
Philips Semiconductors Objective specification
50 V low V
CEsat
NPN transistor
FEATURES
• Low collector-emitter saturation voltage V
corresponding R
CEsat
• High collector current capability IC and I
• High collector current gain h
FE
CM
CEsat
and
• Less heat generation leading to higher efficiency.
APPLICATIONS
• Low and medium power DC/DC convertors
• Low voltage regulation (LDO)
• MOSFET drivers
• Supply line switching
• Battery chargers.
DESCRIPTION
NPN low V
transistor in a SOT54 plastic package.
CEsat
PNP complement: PBSS5350SA.
MARKING
TYPE NUMBER MARKING CODE
PBSS4350SA 4350SA
PBSS4350SA
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CRP
R
CEsat
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
handbook, halfpage
collector-emitter voltage 50 V
collector current (DC) 2 A
repetitive peak collector
3A
current
equivalent on-resistance 130 mΩ
1
2
3
MAM279
1
2
3
2002 Oct 22 2
Fig.1 Simplified outline (SOT54) and symbol.
Philips Semiconductors Objective specification
50 V low V
NPN transistor
CEsat
PBSS4350SA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
collector current (DC) − 2A
repetitive peak collector current note 1 − 3A
peak collector current single peak − 5A
base current (DC) − 0.5 A
total power dissipation T
≤ 25 °C; note 2 − 830 mW
amb
≤ 25 °C; note 3 − 900 mW
T
amb
T
≤ 25 °C; notes 1 and 2 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Operated under pulsed conditions: pulse width tp≤ 100 ms; duty cycle δ≤0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2 104 K/W
in free air; note 3 121 K/W
in free air; note 2 150 K/W
Notes
1. Operated under pulsed conditions: pulse width t
≤ 100 ms; duty cycle δ≤0.25.
p
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
2002 Oct 22 3
Philips Semiconductors Objective specification
50 V low V
NPN transistor
CEsat
PBSS4350SA
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
f
T
collector-base cut-off current VCB=50V; IE=0 −−100 nA
V
=50V; IE= 0; Tj= 150 °C −−50 µA
CB
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=2V; IC= 100 mA 300 −−
V
=2V; IC= 500 mA 300 −−
CE
=2V; IC= 1 A; note 1 300 −−
V
CE
V
=2V; IC= 2 A; note 1 200 −−
CE
V
=2V; IC= 3 A; note 1 100 −−
CE
collector-emitter saturation
voltage
IC= 500 mA; IB=50mA −−80 mV
I
= 1 A; IB=50mA −−160 mV
C
I
= 2 A; IB= 100 mA; note 1 −−280 mV
C
= 2 A; IB= 200 mA; note 1 −−260 mV
I
C
I
= 3 A; IB= 300 mA; note 1 −−370 mV
C
equivalent on-resistance IC= 2 A; IB= 200 mA; note 1 − 100 130 mΩ
base-emitter saturation
voltage
IC= 2 A; IB= 100 mA; note 1 −−1.1 V
I
= 3 A; IB= 300 mA; note 1 −−1.2 V
C
base-emitter turn-on voltage VCE=2V; IC= 1 A; note 1 −−1.2 V
transition frequency IC= 100 mA; VCE=5V;
100 −−MHz
f = 100 MHz
C
c
collector capacitance VCB=10V; IE=Ie= 0; f = 1 MHz −−25 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2002 Oct 22 4
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