Philips PBSS4350D Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ndbook, halfpage
M3D302
PBSS4350D
NPN transistor
Product specification 2000 Mar 08
Philips Semiconductors Product specification
NPN transistor PBSS4350D
FEATURES
• High current capabilities
• Low V
CEsat
.
APPLICATIONS
• Heavy duty battery powered equipment (Automotive,
Telecom and Audio/Video) such as motor and lamp
drivers
• V
critical applications such asthelatest low supply
CEsat
voltage IC applications
• All battery driven equipment to save battery power.
DESCRIPTION
NPN low V
transistor in a SC-74 plastic package.
CEsat
PNP complement: PBSS5350D.
MARKING CODE
TYPE NUMBER MARKING CODE
PBSS4350D 43
PINNING
PIN DESCRIPTION
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
handbook, halfpage
132
Top view
56
4
1, 2, 5, 6
3
4
MAM436
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 6V
collector current (DC) − 3A
peak collector current − 5A
peak base current − 1A
total power dissipation T
amb
= ≤ 25 °C
note 1 − 600 mW
note 2 − 750 mW
T
T
T
stg
j
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
2
.
2000 Mar 08 2
Philips Semiconductors Product specification
NPN transistor PBSS4350D
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BEon
C
c
f
T
thermal resistance from junction to ambient in free air;
note 1 208 K/W
note 2 160 K/W
2
.
collector cut-off current IE= 0; VCB=50V − 100 nA
I
= 0; VCB=50V; Tj= 150 °C − 50 µA
E
emitter cut-off current IC= 0; VEB=5V − 100 nA
DC current gain VCE=2V;
I
= 500 mA 200 −
C
I
= 1 A; note 1 200 −
C
I
= 2 A; note 1 100 −
C
collector-emitter saturation voltage IC= 500 mA; IB=50mA − 90 mV
I
= 1 A; IB=50mA − 170 mV
C
I
= 2 A; IB= 200 mA; note 1 − 290 mV
C
base-emitter saturation voltage IC= 2 A; IB= 200 mA; note 1 − 1.2 V
base-emitter turn-on voltage IC= 1 A; VCE= 2 V; note 1 − 1.1 V
collector capacitance IE=Ie= 0; VCB=10V; f=1MHz − 30 pF
transition frequency IC= 100 mA; VCE=5V;
100 − MHz
f = 100 MHz
Note
1. Pulse test t
≤ 300 µs, δ≤0.02.
p
2000 Mar 08 3
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