Philips PBSS4330X Technical data
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DATA SH EET
ook, halfpage
M3D109
PBSS4330X
30 V, 3 A
NPN low V
Product specification
Supersedes data of 2003 Nov 28
CEsat
(BISS) transistor
2004 Dec 06
Philips Semiconductors Product specification
30 V, 3 A
NPN low V
CEsat
FEATURES
• SOT89 (SC-62) package
• Low collector-emitter saturation voltage V
• High collector current capability: IC and I
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications
(e.g. lamps and LEDs)
– Inductive load driver (e.g. relays, buzzers
and motors).
DESCRIPTION
NPN low V
transistor in a SOT89 plastic package.
CEsat
(BISS) transistor
CEsat
CM
PBSS4330X
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
collector-emitter voltage 30 V
collector current (DC) 3 A
peak collector current 5 A
equivalent on-resistance 100 mΩ
2
3
1
sym042
321
MARKING
TYPE NUMBER MARKING CODE
(1)
Fig.1 Simplified outline (SOT89) and symbol.
PBSS4330X *1R
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS4330X SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
2004 Dec 06 2
Philips Semiconductors Product specification
30 V, 3 A
PBSS4330X
NPN low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
B
tot
stg
j
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 6V
collector current (DC) note 4 − 3A
peak collector current limited by T
base current (DC) − 0.5 A
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
(BISS) transistor
CEsat
− 5A
amb
j(max)
≤ 25 °C
note 1 − 550 mW
note 2 − 1W
note 3 − 1.4 W
note 4 − 1.6 W
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
2004 Dec 06 3
Philips Semiconductors Product specification
30 V, 3 A
NPN low V
handbook, halfpage
2
P
tot
(W)
(1)
1.6
(2)
1.2
(3)
0.8
(4)
0.4
0
0 40 80 160
(BISS) transistor
CEsat
120
T
amb
PBSS4330X
MLE372
(°C)
(1) Ceramic PCB; 7 cm2 mounting pad for collector.
(2) FR4 PCB; 6 cm2 copper mounting pad for collector.
(3) FR4 PCB; 1 cm2 copper mounting pad for collector.
(4) Standard footprint.
Fig.2 Power derating curves.
2004 Dec 06 4
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