Philips PBSS4320X User Manual

查询PBSS4320X供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D109

PBSS4320X

20 V, 3 A
NPN low V

Product specification
Supersedes data of 2003 Dec 15

CEsat

(BISS) transistor

2004 Nov 03

Philips Semiconductors Product specification

20 V, 3 A
NPN low V

CEsat

FEATURES

• SOT89 (SC-62) package

• Low collector-emitter saturation voltage V

• High collector current capability: IC and I

• Higher efficiency leading to less heat generation

• Reduced printed-circuit board requirements.

APPLICATIONS

• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.

• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps

and LEDs).

– Inductive load driver (e.g. relays,

buzzers and motors).

(BISS) transistor

CEsat

CM

PBSS4320X

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CM

R

CEsat

PINNING

PIN DESCRIPTION

collector-emitter voltage 20 V
collector current (DC) 3 A
peak collector current 5 A
equivalent on-resistance 105 mΩ

1 emitter
2 collector
3 base

2

DESCRIPTION

NPN low V
PNP complement: PBSS5320X.

transistor in a SOT89 plastic package.

CEsat

321

MARKING

TYPE NUMBER MARKING CODE

Fig.1 Simplified outline (SOT89) and symbol.

PBSS4320X S44

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PBSS4320X SC-62 plastic surface mounted package; collector pad for good heat

transfer; 3 leads

3

1

sym042

SOT89

2004 Nov 03 2

Philips Semiconductors Product specification

20 V, 3 A

PBSS4320X

NPN low V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
I
P

T
T
T

CBO
CEO
EBO

C
CM
B

tot

stg
j
amb

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 5V
collector current (DC) note 4 − 3A
peak collector current limited by T
base current (DC) − 0.5 A
total power dissipation T

storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C

(BISS) transistor

CEsat

− 5A

amb

j(max)

≤ 25 °C
note 1 − 550 mW
note 2 − 1W
note 3 − 1.4 W
note 4 − 1.6 W

Notes

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.

3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.

4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.

2004 Nov 03 3

Philips Semiconductors Product specification

20 V, 3 A
NPN low V

handbook, halfpage

2

P

tot

(W)

(1)

1.6

(2)

1.2

(3)

0.8

(4)

0.4

0

0 40 80 160

(1) Ceramic PCB; 7 cm

mounting pad for collector.

(2) FR4 PCB; 6 cm2 copper

mounting pad for collector.

(BISS) transistor

CEsat

2

(3) FR4 PCB; 1 cm

mounting pad for collector.

(4) Standard footprint.

120

T

amb

MLE372

(°C)

2

copper

PBSS4320X

Fig.2 Power derating curves.

2004 Nov 03 4