PBSS4320X
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS4320X
20 V, 3 A
NPN low VCEsat (BISS) transistor
Product specification |
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2004 Nov 03 |
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Supersedes data of 2003 Dec 15 |
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Philips Semiconductors |
Product specification |
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20 V, 3 A
PBSS4320X
NPN low VCEsat (BISS) transistor
FEATURES
∙SOT89 (SC-62) package
∙Low collector-emitter saturation voltage VCEsat
∙High collector current capability: IC and ICM
∙Higher efficiency leading to less heat generation
∙Reduced printed-circuit board requirements.
APPLICATIONS
∙Power management
–DC/DC converters
–Supply line switching
–Battery charger
–LCD backlighting.
∙Peripheral drivers
–Driver in low supply voltage applications (e.g. lamps and LEDs).
–Inductive load driver (e.g. relays, buzzers and motors).
DESCRIPTION
NPN low VCEsat transistor in a SOT89 plastic package. PNP complement: PBSS5320X.
MARKING
TYPE NUMBER |
MARKING CODE |
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PBSS4320X |
S44 |
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QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
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MAX. |
UNIT |
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VCEO |
collector-emitter voltage |
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20 |
V |
IC |
collector current (DC) |
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3 |
A |
ICM |
peak collector current |
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5 |
A |
RCEsat |
equivalent on-resistance |
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105 |
mΩ |
PINNING |
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PIN |
DESCRIPTION |
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1 |
emitter |
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2 |
collector |
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3 |
base |
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2
3
1
sym042
3 |
2 |
1 |
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER |
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PACKAGE |
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NAME |
DESCRIPTION |
VERSION |
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PBSS4320X |
SC-62 |
plastic surface mounted package; collector pad for good heat |
SOT89 |
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transfer; 3 leads |
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2004 Nov 03 |
2 |
Philips Semiconductors |
Product specification |
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20 V, 3 A
PBSS4320X
NPN low VCEsat (BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
− |
20 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
20 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
5 |
V |
IC |
collector current (DC) |
note 4 |
− |
3 |
A |
ICM |
peak collector current |
limited by Tj(max) |
− |
5 |
A |
IB |
base current (DC) |
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− |
0.5 |
A |
Ptot |
total power dissipation |
Tamb ≤ 25 °C |
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note 1 |
− |
550 |
mW |
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note 2 |
− |
1 |
W |
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note 3 |
− |
1.4 |
W |
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note 4 |
− |
1.6 |
W |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
ambient temperature |
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−65 |
+150 |
°C |
Notes
1.Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2.Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3.Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4.Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
2004 Nov 03 |
3 |
Philips Semiconductors |
Product specification |
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20 V, 3 A
PBSS4320X
NPN low VCEsat (BISS) transistor
2 |
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MLE372 |
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handbook, halfpage |
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Ptot |
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(W) |
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(1) |
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1.6 |
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(2) |
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1.2 |
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(3) |
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0.8 |
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(4) |
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0.4 |
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0 |
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0 |
40 |
80 |
120 |
160 |
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Tamb (°C) |
(1)Ceramic PCB; 7 cm2 mounting pad for collector.
(2)FR4 PCB; 6 cm2 copper mounting pad for collector.
(3)FR4 PCB; 1 cm2 copper mounting pad for collector.
(4)Standard footprint.
Fig.2 Power derating curves.
2004 Nov 03 |
4 |