Philips PBSS4250X User Manual
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DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D109
PBSS4250X
50 V, 2 A
NPN low V
Product specification
Supersedes data of 2003 Jun 17
CEsat
(BISS) transistor
2004 Nov 08
Philips Semiconductors Product specification
50 V, 2 A
NPN low V
CEsat
FEATURES
• SOT89 (SC-62) package
• Low collector-emitter saturation voltage V
• High collector current capability: IC and I
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
(BISS) transistor
CEsat
CM
PBSS4250X
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
collector-emitter voltage 50 V
collector current (DC) 2 A
peak collector current 5 A
equivalent on-resistance 160 mΩ
1 emitter
2 collector
3 base
2
DESCRIPTION
NPN low V
PNP complement: PBSS5250X.
transistor in a SOT89 plastic package.
CEsat
321
MARKING
TYPE NUMBER MARKING CODE
(1)
Fig.1 Simplified outline (SOT89) and symbol.
PBSS5250X *1M
Note
1. * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS4250X SC-62 plastic surface mounted package; collector pad for good heat
transfer; 3 leads
3
1
sym042
SOT89
2004 Nov 08 2
Philips Semiconductors Product specification
50 V, 2 A
PBSS4250X
NPN low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
collector current (DC) − 2A
peak collector current limited by T
base current (DC) − 0.5 A
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
(BISS) transistor
CEsat
− 5A
amb
j(max)
≤ 25 °C
note 1 − 550 mW
note 2 − 1W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient in free air
note 1 225 K/W
note 2 125 K/W
note 3 90 K/W
note 4 80 K/W
R
th(j-s)
thermal resistance from junction to soldering point 16 K/W
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
2004 Nov 08 3
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