Philips PBSS4240V User Manual [en, ca]

查询PBSS4240V供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D744

PBSS4240V

40 V low V

Product specification 2003 Jan 30

CEsat

NPN transistor

Philips Semiconductors Product specification

40 V low V

CEsat

NPN transistor

FEATURES

• Low collector-emitter saturation voltage V

• High collector current capability IC and I

• High collector current gain (hFE) at high I

CEsat

CM

C

• High efficiency leading to reduced heat generation

• Reduced printed-circuit board area requirements.

APPLICATIONS

• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD back lighting.

• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps

and LEDs)

– Inductive load drivers (e.g. relay, buzzers and

motors).

PBSS4240V

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CRP

R

CEsat

PINNING

handbook, halfpage

collector-emitter voltage 40 V
collector current (DC) 2 A
peak collector current 2 A
equivalent on-resistance <190 mΩ

PIN DESCRIPTION

1 collector
2 collector
3 base
4 emitter
5 collector
6 collector

5

46

DESCRIPTION

NPN transistor providing low V

and high current

CEsat

capability in a SOT666 plastic package.
PNP complement: PBSS5240V.

MARKING

TYPE NUMBER MARKING CODE

PBSS4240V 42

1, 2, 5, 6

3

4

123

Top view

MAM444

Fig.1 Simplified outline (SOT666) and symbol.

2003 Jan 30 2

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4240V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CRP

I

CM

I

B

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) note 1 − 2A
repetitive peak collector current note 2 − 2A
peak collector current − 3A
base current (DC) − 300 mA
peak base current − 1A
total power dissipation T

≤ 25 °C; note 3 − 300 mW

amb

T

≤ 25 °C; note 4 − 500 mW

amb

T

≤ 25 °C; note 1 − 900 mW

amb

T

≤ 25 °C; notes 2 and 3 − 1.2 W

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Notes

1. Device mounted on a ceramic circuit board, Al2O3, standard footprint.

2. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤ 30 ms.

3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.

4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to
ambient

note 1 410 K/W
note 2 215 K/W
note 3 140 K/W
notes 1 and 4 110 K/W

Notes

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.

2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

3. Device mounted on a ceramic circuit board, Al2O3, standard footprint.

4. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤ 30 ms.

Soldering

The only recommended soldering method is reflow soldering.

2003 Jan 30 3

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4240V

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

R

CEsat

V

BEsat

V

BEon

f

T

collector-base cut-off current VCB=40V; IE=0 −−100 nA

V

=40V; IE= 0; T

CB

= 150 °C −−50 µA

amb

collector-emitter cut-off current VCE=30V; IB=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−

=5V; IC= 500 mA 300 − 900

V

CE

V

=5V; IC=1A 200 −−

CE

V

=5V; IC= 2 A; note 1 75 −−

CE

collector-emitter saturation voltage IC= 100 mA; IB=1mA − 50 75 mV

I

= 500 mA; IB=50mA − 70 100 mV

C

I

= 1 A; IB= 100 mA; note 1 − 150 190 mV

C

= 2 A; IB= 200 mA; note 1 − 300 400 mV

I

C

equivalent on-resistance IC= 1 A; IB= 100 mA; note 1 − 150 <190 mΩ
base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
base-emitter turn-on voltage VCE=5V; IC=1A −−1.1 V
transition frequency IC= 50 mA; VCE=10V;

150 −−MHz

f = 100 MHz

C

c

collector capacitance VCB=10V; IE=Ie= 0; f = 1 MHz −−10 pF

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2003 Jan 30 4

Philips Semiconductors Product specification

40 V low V

800

handbook, halfpage

h

FE

600

400

200

0

−1

10

VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150°C.
=25°C.
= −55 °C.

CEsat

1

NPN transistor

MHC471

(1)

(2)

(3)

10 10

2

10

3

IC (mA)

PBSS4240V

3

10

I

C

MHC472

(mA)

4

10

1.2

handbook, halfpage

V

BE

(V)

(1)

0.8

(2)

(3)

0.4

0

4

10

−1

10

110

2

10

VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.2 DC current gain as a function of collector

current; typical values.

3

10

handbook, halfpage

V

CEsat
(mV)

2

10

10

−1

10

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

(1)

(2)

(3)

11010

2103

MHC473

IC (mA)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

3

10

I

C

MHC474

(mA)

4

10

1.2

handbook, halfpage

V

BEsat

(V)

1

(1)

0.8

(2)

0.6

(3)

0.4

0.2

4

10

−1

10

110

2

10

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

2003 Jan 30 5

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

Philips Semiconductors Product specification

40 V low V

handbook, halfpage

2

I

C

(A)

1.6

1.2

0.8

0.4

0

02

T

=25°C.

amb

(1) IB= 3 mA.
(2) IB= 2.7 mA.
(3) IB= 2.4 mA.
(4) IB= 2.1 mA.

0.4

NPN transistor

CEsat

(1)
(2)
(3)

0.8 1.2 1.6

(5) IB= 1.8 mA.
(6) IB= 1.5 mA.
(7) IB= 1.2 mA.
(8) IB= 0.9 mA.

Fig.6 Collector current as a function of

collector-emitter voltage; typical values.

MHC475

(4)
(5)
(6)

(7)
(8)

(9)

(10)

VCE (V)

(9) IB= 0.6 mA.
(10) IB= 0.3 mA.

PBSS4240V

(2)

3

10

IC (mA)

amb

MHC476

= −55°C.

3

10

handbook, halfpage

R

CEsat

(Ω)

2

10

10

1

(1)

−1

10

10

IC/IB= 20.
(1) T

amb

−1

1

= 150 °C. (2) T

10 10

amb

(3)

2

=25°C. (3) T

Fig.7 Collector-emitter equivalent on-resistance

as a function of collector current; typical
values.

4

10

2003 Jan 30 6

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4240V

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT666

D

S

YS

A

456

E

H

E

X

pin 1 index

123

e

DIMENSIONS (mm are the original dimensions)

UNIT b

mm

OUTLINE
VERSION

SOT666

A

0.6

0.5

0.27

0.17

cD

p

0.18

0.08

IEC JEDEC EIAJ

1

1.7

1.5

b

p

e

E

1.3

1.1

A

wM

A

0 1 2 mm

scale

e

H

L

0.3

0.1

p

w

0.1y0.1

e

0.5

1.0

REFERENCES

1

E

1.7

1.5

detail X

PROJECTION

L

p

EUROPEAN

c

ISSUE DATE

01-01-04
01-08-27

2003 Jan 30 7

Philips Semiconductors Product specification

40 V low V

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For datasheets describingmultipletype numbers,the highest-level productstatus determines thedata sheetstatus.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

NPN transistor

CEsat

(1)

PRODUCT

STATUS

PBSS4240V

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance.When theproduct is infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductorsassumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Jan 30 8

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4240V

NOTES

2003 Jan 30 9

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4240V

NOTES

2003 Jan 30 10

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4240V

NOTES

2003 Jan 30 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/01/pp12 Date of release: 2003 Jan 30 Document order number: 9397750 10782

SCA75