Philips PBSS4240V User Manual
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M3D744
PBSS4240V
40 V low V
Product specification 2003 Jan 30
CEsat
NPN transistor
Philips Semiconductors Product specification
40 V low V
CEsat
NPN transistor
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability IC and I
• High collector current gain (hFE) at high I
CEsat
CM
C
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board area requirements.
APPLICATIONS
• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD back lighting.
• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relay, buzzers and
motors).
PBSS4240V
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CRP
R
CEsat
PINNING
handbook, halfpage
collector-emitter voltage 40 V
collector current (DC) 2 A
peak collector current 2 A
equivalent on-resistance <190 mΩ
PIN DESCRIPTION
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
5
46
DESCRIPTION
NPN transistor providing low V
and high current
CEsat
capability in a SOT666 plastic package.
PNP complement: PBSS5240V.
MARKING
TYPE NUMBER MARKING CODE
PBSS4240V 42
1, 2, 5, 6
3
4
123
Top view
MAM444
Fig.1 Simplified outline (SOT666) and symbol.
2003 Jan 30 2
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4240V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) note 1 − 2A
repetitive peak collector current note 2 − 2A
peak collector current − 3A
base current (DC) − 300 mA
peak base current − 1A
total power dissipation T
≤ 25 °C; note 3 − 300 mW
amb
T
≤ 25 °C; note 4 − 500 mW
amb
T
≤ 25 °C; note 1 − 900 mW
amb
T
≤ 25 °C; notes 2 and 3 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
2. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤ 30 ms.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
4. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 410 K/W
note 2 215 K/W
note 3 140 K/W
notes 1 and 4 110 K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
3. Device mounted on a ceramic circuit board, Al2O3, standard footprint.
4. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤ 30 ms.
Soldering
The only recommended soldering method is reflow soldering.
2003 Jan 30 3
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4240V
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
f
T
collector-base cut-off current VCB=40V; IE=0 −−100 nA
V
=40V; IE= 0; T
CB
= 150 °C −−50 µA
amb
collector-emitter cut-off current VCE=30V; IB=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
=5V; IC= 500 mA 300 − 900
V
CE
V
=5V; IC=1A 200 −−
CE
V
=5V; IC= 2 A; note 1 75 −−
CE
collector-emitter saturation voltage IC= 100 mA; IB=1mA − 50 75 mV
I
= 500 mA; IB=50mA − 70 100 mV
C
I
= 1 A; IB= 100 mA; note 1 − 150 190 mV
C
= 2 A; IB= 200 mA; note 1 − 300 400 mV
I
C
equivalent on-resistance IC= 1 A; IB= 100 mA; note 1 − 150 <190 mΩ
base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
base-emitter turn-on voltage VCE=5V; IC=1A −−1.1 V
transition frequency IC= 50 mA; VCE=10V;
150 −−MHz
f = 100 MHz
C
c
collector capacitance VCB=10V; IE=Ie= 0; f = 1 MHz −−10 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2003 Jan 30 4
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