DISCRETE SEMICONDUCTORS
DATA SH EET
ge
M3D088
PBSS4240T
40 V low V
Product specification 2001 Jul 13
CEsat
NPN transistor
Philips Semiconductors Product specification
40 V low V
CEsat
NPN transistor
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Replacement for SOT89/SOT223 standard packaged
transistors.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavydutybatterypoweredequipment(motorandlamp
drivers).
DESCRIPTION
NPN low V
transistor in a SOT23 plastic package.
CEsat
PNP complement: PBSS5240T.
PBSS4240T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
collector-emitter voltage 40 V
peak collector current 3 A
equivalent on-resistance <200 mΩ
3
1
21
3
2
MARKING
TYPE NUMBER MARKING CODE
PBSS4240T ZE*
Note
1. * = p: made in Hongkong.
* = t: made in Malaysia.
(1)
Top view
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
2001 Jul 13 2
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4240T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 2A
peak collector current − 3A
peak base current − 300 mA
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
T
≤ 25 °C; note 2 − 480 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 417 K/W
in free air; note 2 260 K/W
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.
2001 Jul 13 3
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4240T
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
V
R
V
FE
CEsat
CEsat
BEsat
collector-base cut-off current VCB=30V; IE=0 −−100 nA
V
=30V; IE= 0; Tj= 150 °C −−50 µA
CB
emitter-base cut-off current VEB=4V; IC=0 −−100 nA
DC current gain VCE=2V; IC= 100 mA 350 470 −
V
=2V; IC= 500 mA 300 450 −
CE
=2V; IC= 1 A 300 420 −
V
CE
V
=2V; IC= 2 A 150 250 −
CE
collector-emitter saturation
voltage
IC= 100 mA; IB=1mA − 45 70 mV
= 500 mA; IB=50mA − 70 100 mV
I
C
I
= 750 mA; IB=15mA − 120 180 mV
C
I
= 1 A; IB= 50 mA; note 1 − 130 180 mV
C
= 2 A; IB= 200 mA; note 1 − 240 320 mV
I
C
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 140 <200 mΩ
base-emitter saturation
IC= 2 A; IB= 200 mA; note 1 −−1.1 V
voltage
V
C
f
T
BEon
c
base-emitter turn on voltage VCE=2V; IC= 100 mA −−0.75 V
collector capacitance VCB=10V; IE=Ie= 0; f = 1 MHz − 15 20 pF
transition frequency IC= 100 mA; VCE= 10 V; f = 100 MHz 100 230 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Jul 13 4
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4240T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
E
H
E
AB
X
v M
A
12
e
1
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
p
0.48
0.15
0.38
0.09
IEC JEDEC EIAJ
UNIT
A
max.
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
b
p
e
cD
3.0
2.8
w M
B
0 1 2 mm
scale
e
0.95
H
1
2.5
2.1
e
E
1.4
1.9
1.2
REFERENCES
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2001 Jul 13 5
Philips Semiconductors Product specification
40 V low V
DATA SHEET STATUS
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
NPN transistor
CEsat
PRODUCT
(1)
STATUS
PBSS4240T
(2)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditionsabovethosegiven in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personalinjury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofany of these products, conveys no licence ortitle
under any patent, copyright, or mask work right to these
products,and makes no representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Jul 13 6
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4240T
NOTES
2001 Jul 13 7
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2001
Internet: http://www.semiconductors.philips.com
72
Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Jul 13 Document order number: 9397 750 08386
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