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查询PBSS4230T供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D088
PBSS4230T
30 V, 2 A
NPN low V
Product specification 2003 Sep 29
CEsat
(BISS) transistor
Page 2
Philips Semiconductors Product specification
30 V, 2 A
NPN low V
CEsat
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability IC and I
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETs in specific
applications.
APPLICATIONS
• Power management
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral driver
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relays, buzzers and
motors).
(BISS) transistor
CEsat
CM
PBSS4230T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
collector-emitter voltage 30 V
collector current (DC) 2 A
peak collector current 3 A
equivalent on-resistance 200 mΩ
3
3
1
DESCRIPTION
NPNBISStransistorinaSOT23plasticpackageproviding
ultra low V
CEsat
and R
parameters.
CEsat
PNP complement: PBSS5230T.
Top view
21
MAM255
2
MARKING
TYPE NUMBER MARKING CODE
(1)
Fig.1 Simplified outline (SOT23) and symbol.
PBSS4230T *3D
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS4230T − plastic surface mounted package; 3 leads SOT23
2003 Sep 29 2
Page 3
Philips Semiconductors Product specification
30 V, 2 A
PBSS4230T
NPN low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 30 V
emitter-base voltage open collector − 5V
collector current (DC) − 2A
peak collector current − 3A
peak base current − 300 mA
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
(BISS) transistor
CEsat
≤ 25 °C; note 1 − 300 mW
amb
T
≤ 25 °C; note 2 − 480 mW
amb
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 417 K/W
in free air; note 2 260 K/W
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2003 Sep 29 3
Page 4
Philips Semiconductors Product specification
30 V, 2 A
PBSS4230T
NPN low V
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
V
R
V
V
f
T
C
FE
CEsat
CEsat
BEsat
BEon
c
collector-base cut-off current VCB=30V; IE=0 −−100 nA
emitter-base cut-off current VEB=4V; IC=0 −−100 nA
DC current gain VCE=2V; IC= 100 mA 350 470 −
collector-emitter saturation voltage IC= 100 mA; IB=1mA − 45 70 mV
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 140 200 mΩ
base-emitter saturation voltage IC= 2 A; IB= 200 mA; note 1 −−1.1 V
base-emitter turn-on voltage VCE=2V; IC= 100 mA −−0.75 V
transition frequency IC= 100 mA; VCE=10V;
collector capacitance VCB=10V; IE=Ie= 0; f = 1 MHz − 15 20 pF
(BISS) transistor
CEsat
V
=30V; IE= 0; Tj= 150 °C −−50 µA
CB
V
=2V; IC= 500 mA 300 450 −
CE
=2V; IC= 1 A 300 420 −
V
CE
V
=2V; IC= 2 A 150 250 −
CE
= 500 mA; IB=50mA − 70 100 mV
I
C
I
= 750 mA; IB=15mA − 120 180 mV
C
I
= 1 A; IB= 50 mA; note 1 − 130 180 mV
C
= 2 A; IB= 200 mA; note 1 − 240 320 mV
I
C
100 230 − MHz
f = 100 MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2003 Sep 29 4
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Philips Semiconductors Product specification
30 V, 2 A
PBSS4230T
NPN low V
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
(BISS) transistor
CEsat
D
3
E
H
E
AB
X
v M
A
12
e
1
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
p
0.48
0.15
0.38
0.09
IEC JEDEC EIAJ
UNIT
A
max.
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
b
p
e
cD
3.0
2.8
w M
B
0 1 2 mm
scale
e
0.95
H
1
2.5
2.1
e
E
1.4
1.9
1.2
REFERENCES
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2003 Sep 29 5
Page 6
Philips Semiconductors Product specification
30 V, 2 A
PBSS4230T
NPN low V
DATA SHEET STATUS
LEVEL
I Objective data Development This data sheet contains data from the objective specification for product
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
III Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DATA SHEET
STATUS
(BISS) transistor
CEsat
(1)
PRODUCT
STATUS
(2)(3)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITION
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers using or sellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Sep 29 6
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Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R75/01/pp7 Date of release: 2003 Sep 29 Document order number: 9397 750 11898
SCA75
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