Philips PBSS4160T User Guide [en, ca]

查询PBSS4160T供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D088

PBSS4160T

60 V, 1 A
NPN low V

Product specification
Supersedes data of 2003 Jun 24

CEsat

(BISS) transistor

2004 May 12

Philips Semiconductors Product specification

60 V, 1 A
NPN low V

CEsat

FEATURES

• Low collector-emitter saturation voltage V

• High collector current capability IC and I

• High efficiency, reduces heat generation

• Reduces printed-circuit board area required

• Cost effectivereplacement for medium power transistor

BCP55 and BCX55.

APPLICATIONS

• Major application segments:
– Automotive 42 V power
– Telecom infrastructure
– Industrial.

• Power management:
– DC-to-DC conversion
– Supply line switching.

• Peripheral driver
– Driver in low supply voltage applications (e.g. lamps

and LEDs)

– Inductive load driver (e.g. relays,

buzzers and motors).

DESCRIPTION

NPN low V

transistor in a SOT23 plastic package.

CEsat

PNP complement: PBSS5160T.

(BISS) transistor

CEsat

CM

PBSS4160T

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CM

R

CEsat

PINNING

handbook, halfpage

collector-emitter voltage 60 V
collector current (DC) 1 A
peak collector current 2 A
equivalent on-resistance 250 mΩ

PIN DESCRIPTION

1 base
2 emitter
3 collector

Top view

3

1

21

MAM255

3

2

Fig.1 Simplified outline (SOT23) and symbol.

MARKING

TYPE NUMBER MARKING CODE

(1)

PBSS4160T *U5

Note

1. * = p: made in Hong Kong

* = t: made in Malaysia
* = W: made in China.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PBSS4160T − plastic surface mounted package; 3 leads SOT23

2004 May 12 2

Philips Semiconductors Product specification

60 V, 1 A

PBSS4160T

NPN low V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I

I
I
I
P

T
T
T

CBO
CEO
EBO

C

CM
B
BM

tot

stg
j
amb

collector-base voltage open emitter − 80 V
collector-emitter voltage open base − 60 V
emitter-base voltage open collector − 5V
collector current (DC) note 1 − 0.9 A

peak collector current t = 1 ms or limited by T
base current (DC) − 300 mA
peak base current tp≤ 300 µs; δ≤0.02 − 1A
total power dissipation T

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

(BISS) transistor

CEsat

note 2 − 1A

j(max)

≤ 25 °C; note 1 − 270 mW

amb

T

≤ 25 °C; note 2 − 400 mW

amb

T

≤ 25 °C; notes 1 and 3 − 1.25 W

amb

− 2A

Notes

1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad.

3. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤ 10 ms.

120

T

amb

MLE128

(°C)

500

handbook, halfpage

P

tot

(mW)

400

(1)

300

(2)

200

100

0

0 40 80 160

(1) Device mounted with 1 cm2 collector tab.
(2) Device mounted on standard footprint.

Fig.2 Power derating curves.

2004 May 12 3

Philips Semiconductors Product specification

60 V, 1 A

PBSS4160T

NPN low V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

Notes

1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.

3. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤ 10 ms.

handbook, full pagewidth

thermal resistance from junction to
ambient

3

10

δ = 1

Z

th

(K/W)

0.75

0.5

0.33

2

10

0.2

(BISS) transistor

CEsat

in free air; note 1 465 K/W
in free air; note 2 312 K/W
in free air; notes 1 and 3 100 K/W

MLE127

0.1

0.05

0.02

10

0.01

0

1

−5

10

Mounted on printed-circuit board; standard footprint.

−4

10

−3

10

Fig.3 Transient thermal impedance as a function of pulse time; typical values.

−2

10

−1

10

1

10 10

2

tp (s)

3

10

2004 May 12 4

Philips Semiconductors Product specification

60 V, 1 A

PBSS4160T

NPN low V

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

CES

I

EBO

h

V

V
R
V
f

T

C

FE

CEsat

BEsat

CEsat

BEon

c

collector-base cut-off current VCB= 60 V; IE=0A −−100 nA

collector-emitter cut-off current VCE= 60 V; VBE=0A −−100 nA
emitter-base cut-off current VEB=5V; IC=0A −−100 nA
DC current gain VCE=5V; IC= 1 mA 250 400 −

collector-emitter saturation voltage IC= 100 mA; IB=1mA − 90 110 mV

base-emitter saturation voltage IC= 1 A; IB=50mA − 0.95 1.1 V
equivalent on-resistance IC= 1 A; IB= 100 mA; note 1 − 200 250 mΩ
base-emitter turn-on voltage VCE=5V; IC=1A − 0.82 0.9 V
transition frequency IC= 50 mA; VCE=10V;

collector capacitance VCB=10V;IE=Ie= 0 A; f = 1 MHz − 5.5 10 pF

(BISS) transistor

CEsat

= 60 V; IE= 0 A; Tj= 150 °C −−50 µA

V

CB

VCE=5V; IC= 500 mA; note 1 200 350 −
VCE=5V; IC= 1 A; note 1 100 150 −

IC= 500 mA; IB=50mA − 110 140 mV
IC= 1 A; IB= 100 mA; note 1 − 200 250 mV

150 220 − MHz

f = 100 MHz

Note

1. Pulse test: t

800

handbook, halfpage

h

FE

600

400

200

0

−1

10

VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C.
=25°C.
= −55 °C.

≤ 300 µs; δ≤0.02.

p

(1)

(2)

(3)

1

10 10

MLE130

2

10

3

IC (mA)

4

10

1.2

handbook, halfpage

V

BE

(V)

0.8

0.4

0

−1

10

VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 100 °C.

110

(1)

(2)

(3)

2

10

10

MLE133

3

IC (mA)

4

10

Fig.4 DC current gain as a function of collector

current; typical values.

2004 May 12 5

Fig.5 Base-emitter voltage as a function of

collector current; typical values.

Philips Semiconductors Product specification

60 V, 1 A
NPN low V

V

CEsat

(V)

−1

10

−2

10

−3

10

IC/IB= 10.
(1) T

amb

(2) T

amb

(3) T

amb

1

−1

10

= 100 °C.
=25°C.
= −55 °C.

handbook, halfpage

(BISS) transistor

CEsat

(1)

(2)

(3)

110

PBSS4160T

MLE135

handbook, halfpage

V

CEsat

1

(V)

−1

10

(1)

(3) (2)

−2

10

2

10

3

10

IC (mA)

4

10

−1

10

11010

2

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C.
=25°C.
= −55 °C.

10

MLE104

3

IC (mA)

4

10

Fig.6 Collector-emitter saturation voltage as a

function of collector current; typical values.

10

MLE129

3

IC (mA)

V

CEsat

1

handbook, halfpage

(V)

−1

10

−2

10

−1

10

T

=25°C.

amb

(1) IC/IB= 100.
(2) IC/IB= 50.

(1)

(2)

11010

2

Fig.7 Collector-emitter saturation voltage as a

function of collector current; typical values.

10

MLE134

3

IC (mA)

4

10

1.2

handbook, halfpage

V

BEsat

(V)

0.8

(1)

(2)

(3)

0.4

0

4

10

−1

10

110

2

10

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 100 °C.

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

2004 May 12 6

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

Philips Semiconductors Product specification

60 V, 1 A
NPN low V

handbook, halfpage

2

I

C

(A)

1.6

1.2

0.8

0.4

0

05

=25°C.

T

amb

(1) IB= 60 mA.
(2) IB= 54 mA.
(3) IB= 48 mA.
(4) IB= 42 mA.

1

Fig.10 Collector current as a function of

collector-emitter voltage; typical values.

(BISS) transistor

CEsat

(4)(5)(6)

234

(5) IB= 36 mA.
(6) IB= 30 mA.
(7) IB= 24 mA.
(8) IB= 18 mA.

(2)(3)

MLE131

(1)

(7)
(8)

(9)

(10)

VCE (V)

(9) IB= 12 mA.
(10) IB= 6 mA.

PBSS4160T

10

MLE132

3

IC (mA)

amb

3

10

handbook, halfpage

R

CEsat

(Ω)

2

10

10

1

−1

10

10

IC/IB= 20.

(1) T

amb

−1

1

= 100 °C. (2) T

10 10

amb

(1)

(2)

(3)

2

=25°C. (3) T

Fig.11 Equivalent on-resistance as a function of

collector current; typical values.

4

10

= −55 °C.

2004 May 12 7

Philips Semiconductors Product specification

60 V, 1 A

PBSS4160T

NPN low V

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads SOT23

(BISS) transistor

CEsat

D

E

H

E

AB

X

v

M

A

3

12

e

1

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

max.

0.1

b

p

0.48

0.15

0.38

0.09

IEC JEDEC EIAJ

b

p

e

cD

3.0

2.8

w

M

B

0 1 2 mm

scale

e

0.95

H

1

2.5

2.1

E

1.4

1.9

1.2

REFERENCES

e

Q

A

A

1

c

L

p

detail X

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28
99-09-13

2004 May 12 8

Philips Semiconductors Product specification

60 V, 1 A

PBSS4160T

NPN low V

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(BISS) transistor

CEsat

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 May 12 9

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R75/02/pp10 Date of release: 2004 May 12 Document order number: 9397 750 13198

SCA76