Philips PBSS4160T User Guide

查询PBSS4160T供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D088

PBSS4160T

60 V, 1 A
NPN low V

Product specification
Supersedes data of 2003 Jun 24

CEsat

(BISS) transistor

2004 May 12

Philips Semiconductors Product specification

60 V, 1 A
NPN low V

CEsat

FEATURES

• Low collector-emitter saturation voltage V

• High collector current capability IC and I

• High efficiency, reduces heat generation

• Reduces printed-circuit board area required

• Cost effectivereplacement for medium power transistor

BCP55 and BCX55.

APPLICATIONS

• Major application segments:
– Automotive 42 V power
– Telecom infrastructure
– Industrial.

• Power management:
– DC-to-DC conversion
– Supply line switching.

• Peripheral driver
– Driver in low supply voltage applications (e.g. lamps

and LEDs)

– Inductive load driver (e.g. relays,

buzzers and motors).

DESCRIPTION

NPN low V

transistor in a SOT23 plastic package.

CEsat

PNP complement: PBSS5160T.

(BISS) transistor

CEsat

CM

PBSS4160T

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CM

R

CEsat

PINNING

handbook, halfpage

collector-emitter voltage 60 V
collector current (DC) 1 A
peak collector current 2 A
equivalent on-resistance 250 mΩ

PIN DESCRIPTION

1 base
2 emitter
3 collector

Top view

3

1

21

MAM255

3

2

Fig.1 Simplified outline (SOT23) and symbol.

MARKING

TYPE NUMBER MARKING CODE

(1)

PBSS4160T *U5

Note

1. * = p: made in Hong Kong

* = t: made in Malaysia
* = W: made in China.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PBSS4160T − plastic surface mounted package; 3 leads SOT23

2004 May 12 2

Philips Semiconductors Product specification

60 V, 1 A

PBSS4160T

NPN low V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I

I
I
I
P

T
T
T

CBO
CEO
EBO

C

CM
B
BM

tot

stg
j
amb

collector-base voltage open emitter − 80 V
collector-emitter voltage open base − 60 V
emitter-base voltage open collector − 5V
collector current (DC) note 1 − 0.9 A

peak collector current t = 1 ms or limited by T
base current (DC) − 300 mA
peak base current tp≤ 300 µs; δ≤0.02 − 1A
total power dissipation T

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

(BISS) transistor

CEsat

note 2 − 1A

j(max)

≤ 25 °C; note 1 − 270 mW

amb

T

≤ 25 °C; note 2 − 400 mW

amb

T

≤ 25 °C; notes 1 and 3 − 1.25 W

amb

− 2A

Notes

1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm2 collector mounting pad.

3. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤ 10 ms.

120

T

amb

MLE128

(°C)

500

handbook, halfpage

P

tot

(mW)

400

(1)

300

(2)

200

100

0

0 40 80 160

(1) Device mounted with 1 cm2 collector tab.
(2) Device mounted on standard footprint.

Fig.2 Power derating curves.

2004 May 12 3