Philips PBSS4140V User Guide

查询PBSS4140V供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D744

PBSS4140V

40 V low V

Product specification
Supersedes data of 2001 Nov 05

CEsat

NPN transistor

2002 Jun 20

Philips Semiconductors Product specification

40 V low V

CEsat

NPN transistor

FEATURES

• 300 mW total power dissipation

• Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin

package

• Improved thermal behaviour due to flat leads

• Excellent coplanarity due to straight leads

• Low collector-emitter saturation voltage

• High current capabilities

• Reduced required PCB area.

APPLICATIONS

• General purpose switching and muting

• LCD backlighting

• Supply line switching circuits

• Battery driven equipment (mobile phones, video

cameras and hand-held devices).

PBSS4140V

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CRP

R

CEsat

PINNING

PIN DESCRIPTION

1 collector
2 collector
3 base
4 emitter
5 collector
6 collector

collector-emitter voltage 40 V
collector current (DC) 1 A
peak collector current 2 A
equivalent on-resistance <190 mΩ

DESCRIPTION

NPN low V

transistor with high current capability in a

CEsat

SOT666 plastic package.PNPcomplement: PBSS5140V.

MARKING

TYPE NUMBER MARKING CODE

PBSS4140V 22

handbook, halfpage

Top view

5

46

123

MAM444

1, 2, 5, 6

3

Fig.1 Simplified outline (SOT666) and symbol.

4

2002 Jun 20 2

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4140V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

CRP

I

B

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 3A
repetitive peak collector current note 1 − 2A
base current (DC) − 300 mA
peak base current − 1A
total power dissipation T

≤ 25 °C; note 2 − 300 mW

amb

T

≤ 25 °C; note 3 − 500 mW

amb

T

≤ 25 °C; notes 1 and 2 − 1.2 W

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Notes

1. Operated under pulsed conditions: t

≤ 30 ms; δ≤0.2.

p

2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 410 K/W

note 2 215 K/W
notes 1 and 3 110 K/W

Notes

1. Device mounted on a printed circuit board; single sided copper; tinplated; standard footprint.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm

2

3. Operated under pulsed conditions: tp≤ 30 ms; δ≤0.2.

Soldering

The only recommended soldering method is reflow soldering.

.

2002 Jun 20 3

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4140V

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

R

CEsat

V

BEsat

V

BEon

f

T

collector-base cut-off current VCB=40V; IE=0 −−100 nA

V

=40V; IE= 0; T

CB

= 150 °C −−50 µA

amb

collector-emitter cut-off current VCE=30V; IB=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−

=5V; IC= 500 mA 300 − 900

V

CE

V

=5V; IC=1A 200 −−

CE

V

=5V; IC= 2 A; note 1 75 −−

CE

collector-emitter saturation voltage IC= 100 mA; IB=1mA − 50 80 mV

I

= 500 mA; IB=50mA − 70 110 mV

C

I

= 1 A; IB= 100 mA; note 1 − 150 190 mV

C

= 2 A; IB= 200 mA; note 1 − 320 440 mV

I

C

equivalent on-resistance IC= 1 A; IB= 100 mA; note 1 − 150 <190 mΩ
base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
base-emitter turn-on voltage VCE=5V; IC=1A −−1.1 V
transition frequency IC= 50 mA; VCE=10V;

150 −−MHz

f = 100 MHz

C

c

collector capacitance VCB=10V; IE=Ie= 0; f = 1 MHz −−10 pF

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2002 Jun 20 4

Philips Semiconductors Product specification

40 V low V

1000

handbook, halfpage

h

FE
800

600

400

200

0

−1

−10

VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

CEsat

−1

NPN transistor

(1)

(2)

(3)

−10

−10

2

−10

3

IC (mA)

MLD746

−10

PBSS4140V

10

handbook, halfpage

V

BE

(V)

1

−1

4

10

−1

10

11010

(1)

(2)
(3)

2103

VCE=5V.
(1) T
(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

MLD747

IC (mA)

4

10

Fig.2 DC current gain as a function of collector

current; typical values.

2

10

I

C

MLD748

(mA)

3

10

handbook, halfpage

V

CEsat

(mV)

2

10

10

1

−1

10

IC/IB= 10.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

(1)

(2)

(3)

110

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

(2)

2

10

I

C

MLD749

(mA)

3

10

2

10

handbook, halfpage

R

CEsat

(Ω)

10

1

−1

3

10

10

−1

10

110

(1)

(3)

IC/IB= 10.
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

2002 Jun 20 5

Fig.5 Equivalent on-resistance as a function of

collector current; typical values.

Philips Semiconductors Product specification

40 V low V

400

handbook, halfpage

f

T

(MHz)

300

200

100

0

0 200

VCE=10V.

NPN transistor

CEsat

400 600 800

PBSS4140V

MLD750

1000

IC (mA)

Fig.6 Transition frequency as a function of

collector current.

2002 Jun 20 6

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4140V

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT666

D

S

YS

A

456

E

H

E

X

pin 1 index

123

e

DIMENSIONS (mm are the original dimensions)

UNIT b

mm

OUTLINE
VERSION

SOT666

A

0.6

0.5

0.27

0.17

cD

p

0.18

0.08

IEC JEDEC EIAJ

1

1.7

1.5

b

p

e

E

1.3

1.1

A

wM

A

0 1 2 mm

scale

e

H

L

0.3

0.1

p

w

0.1y0.1

e

0.5

1.0

REFERENCES

1

E

1.7

1.5

detail X

PROJECTION

L

p

EUROPEAN

c

ISSUE DATE

01-01-04
01-08-27

2002 Jun 20 7

Philips Semiconductors Product specification

40 V low V

DATA SHEET STATUS

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

NPN transistor

CEsat

PRODUCT

(1)

STATUS

PBSS4140V

(2)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at any otherconditionsabovethose given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarranty that such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of these products, conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,and makes no representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2002 Jun 20 8

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4140V

NOTES

2002 Jun 20 9

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4140V

NOTES

2002 Jun 20 10

Philips Semiconductors Product specification

40 V low V

NPN transistor

CEsat

PBSS4140V

NOTES

2002 Jun 20 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/02/pp12 Date of release:2002Jun 20 Document order number: 9397 750 09428

SCA74