Page 1
查询PBSS4140U供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D102
PBSS4140U
40 V low V
Product specification
Supersedes data of 2001 Mar 27
CEsat
NPN transistor
2001 Jul 13
Page 2
Philips Semiconductors Product specification
40 V low V
CEsat
NPN transistor
FEATURES
• Low collector-emitter saturation voltage
• High current capabilities.
• Improved device reliability due to reduced heat
generation.
• EnhancedperformanceoverSOT231Ageneralpurpose
packaged transistors.
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low V
transistor in a SOT323 plastic package.
CEsat
PNP complement: PBSS5140U.
MARKING
TYPE NUMBER MARKING CODE
PBSS4140U 41t
PBSS4140U
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
handbook, halfpage
Fig.1 Simplified outline SOT323 and symbol.
collector-emitter voltage 40 V
peak collector current 2 A
equivalent on-resistance <500 mΩ
1 base
2 emitter
3 collector
3
1
1
Top view
2
MAM062
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 1A
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
T
≤ 25 °C; note 2 − 350 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
2001 Jul 13 2
Page 3
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4140U
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 500 K/W
in free air; note 2 357 K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
collector-base cut-off
current
collector-emitter cut-off
VCB= 40 V; IC=0 −−100 nA
V
= 40 V; IC= 0; T
CB
= 150 °C −−50 µA
amb
VCE= 30 V; IB=0 −−100 nA
current
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
=5V; IC= 500 mA 300 − 900
V
CE
V
=5V; IC=1A 200 −−
CE
collector-emitter saturation
voltage
IC= 100 mA; IB=1mA −−200 mV
I
= 500 mA; IB=50mA −−250 mV
C
I
= 1 A; IB= 100 mA −−500 mV
C
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 260 <500 mΩ
base-emitter saturation
IC= 1 A; IB= 100 mA −−1.2 V
voltage
V
BEon
base-emitter turn-on
VCE=5V; IC=1A −−1.1 V
voltage
f
T
C
c
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz 150 −−MHz
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz −−10 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Jul 13 3
Page 4
Philips Semiconductors Product specification
40 V low V
1000
handbook, halfpage
h
FE
800
600
400
200
0
−1
10
VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
CEsat
1
NPN transistor
MLD660
(1)
(2)
(3)
10
2
10
10
3
IC (mA)
PBSS4140U
10
handbook, halfpage
V
BE
(V)
1
−1
4
10
10
−1
10
11010
(1)
(2)
(3)
2103
VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
MLD656
IC (mA)
4
10
Fig.2 DC current gain as a function of collector
current; typical values.
3
10
I
C
MLD657
(mA)
3
10
handbook, halfpage
V
CEsat
(mV)
2
10
10
1
11010
IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
(1)
(2)
(3)
2
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−3
10
I
MLD658
10
(mA)
C
−4
2
10
handbook, halfpage
R
CEsat
(Ω)
10
1
−1
4
10
10
−1
10
110
(1)
(3)
(2)
−2
10
IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Jul 13 4
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
Page 5
Philips Semiconductors Product specification
40 V low V
400
handbook, halfpage
f
T
(MHz)
300
200
100
0
0 200
VCE=10V.
NPN transistor
CEsat
400 600 800
PBSS4140U
MLD659
1000
IC (mA)
Fig.6 Transition frequency as a function of
collector current; typical values.
2001 Jul 13 5
Page 6
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4140U
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT323
D
y
3
E
H
E
AB
X
v M
A
12
e
DIMENSIONS (mm are the original dimensions)
A
UNIT
mm
A
1.1
0.8
max
0.1
1
b
p
0.4
0.3
b
1
p
e
cD
0.25
2.2
0.10
1.8
A
A
1
B
w M
0 1 2 mm
scale
e
H
E
1.35
1.15
1.3
e
1
0.65
E
2.2
2.0
L
p
0.45
0.15
L
p
detail X
Qwv
0.23
0.13
0.20.2
Q
c
OUTLINE
VERSION
SOT323 SC-70
IEC JEDEC EIAJ
REFERENCES
2001 Jul 13 6
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Page 7
Philips Semiconductors Product specification
40 V low V
DATA SHEET STATUS
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
NPN transistor
CEsat
PRODUCT
(1)
STATUS
PBSS4140U
(2)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any otherconditionsabovethose given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of these products, conveys nolicenceortitle
under any patent, copyright, or mask work right to these
products,and makes no representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Jul 13 7
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2001
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Printed in The Netherlands 613514/02/pp8 Date of release:2001 Jul 13 Document order number: 9397 750 08427
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