Philips PBSS4140U User Guide
查询PBSS4140U供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D102
PBSS4140U
40 V low V
Product specification
Supersedes data of 2001 Mar 27
CEsat
NPN transistor
2001 Jul 13
Philips Semiconductors Product specification
40 V low V
CEsat
NPN transistor
FEATURES
• Low collector-emitter saturation voltage
• High current capabilities.
• Improved device reliability due to reduced heat
generation.
• EnhancedperformanceoverSOT231Ageneralpurpose
packaged transistors.
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low V
transistor in a SOT323 plastic package.
CEsat
PNP complement: PBSS5140U.
MARKING
TYPE NUMBER MARKING CODE
PBSS4140U 41t
PBSS4140U
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
handbook, halfpage
Fig.1 Simplified outline SOT323 and symbol.
collector-emitter voltage 40 V
peak collector current 2 A
equivalent on-resistance <500 mΩ
1 base
2 emitter
3 collector
3
1
1
Top view
2
MAM062
3
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 1A
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
T
≤ 25 °C; note 2 − 350 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
2001 Jul 13 2
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4140U
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 500 K/W
in free air; note 2 357 K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
collector-base cut-off
current
collector-emitter cut-off
VCB= 40 V; IC=0 −−100 nA
V
= 40 V; IC= 0; T
CB
= 150 °C −−50 µA
amb
VCE= 30 V; IB=0 −−100 nA
current
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
=5V; IC= 500 mA 300 − 900
V
CE
V
=5V; IC=1A 200 −−
CE
collector-emitter saturation
voltage
IC= 100 mA; IB=1mA −−200 mV
I
= 500 mA; IB=50mA −−250 mV
C
I
= 1 A; IB= 100 mA −−500 mV
C
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 260 <500 mΩ
base-emitter saturation
IC= 1 A; IB= 100 mA −−1.2 V
voltage
V
BEon
base-emitter turn-on
VCE=5V; IC=1A −−1.1 V
voltage
f
T
C
c
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz 150 −−MHz
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz −−10 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Jul 13 3
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