Philips PBSS4140T Technical data
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PBSS4140T
40 V, 1A
NPN low V
Product specification
Supersedes data of 2001 Jul 13
CEsat
(BISS) transistor
2004 Mar 16
Philips Semiconductors Product specification
40 V, 1A
NPN low V
CEsat
FEATURES
• Low collector-emitter saturation voltage
• High current capabilities.
• Improved device reliability due to reduced heat
generation.
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low V
transistor in a SOT23 plastic package.
CEsat
PNP complement: PBSS5140T.
(BISS) transistor
PBSS4140T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
collector-emitter voltage 40 V
peak collector current 2 A
equivalent on-resistance <500 mΩ
3
3
MARKING
TYPE NUMBER MARKING CODE
PBSS4140T ZT*
Note
(1)
21
Top view
1
2
MAM255
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
* = W: made in China.
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PBSS4140T − plastic surface mounted package; 3 leads SOT23
2004 Mar 16 2
Philips Semiconductors Product specification
40 V, 1A
PBSS4140T
NPN low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 1A
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
(BISS) transistor
CEsat
≤ 25 °C; note 1 − 300 mW
amb
T
≤ 25 °C; note 2 − 450 mW
amb
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYPICAL UNIT
R
th(j-a)
thermal resistancefrom junction
to ambient
in free air; note 1 417 K/W
in free air; note 2 278 K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
2004 Mar 16 3
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