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M3D186
PBSS4140S
40 V low V
Product specification 2001 Nov 27
CEsat
NPN transistor
Page 2
Philips Semiconductors Product specification
40 V low V
CEsat
NPN transistor
FEATURES
• High power dissipation (830 mW)
• Ultra low collector-emitter saturation voltage
• 1 A continuous current
• High current switching
• Improved device reliability due to reduced heat
generation.
APPLICATIONS
• Medium power switching and muting
• Linear regulators
• DC/DC converter
• LCD back-lighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low V
transistor in a SOT54 plastic package.
CEsat
PNP complement: PBSS5140S.
PBSS4140S
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
handbook, halfpage
collector-emitter voltage 40 V
collector current (DC) 1 A
peak collector current 2 A
equivalent on-resistance <500 mΩ
1 base
2 collector
3 emitter
1
2
3
MAM459
2
1
3
MARKING
TYPE NUMBER MARKING CODE
Fig.1 Simplified outline (SOT54) and symbol.
PBSS4140S S4140S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 1A
total power dissipation T
≤ 25 °C; note 1 − 830 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
2001 Nov 27 2
Page 3
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4140S
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 150 K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
collector-base cut-off
current
collector-emitter cut-off
VCB= 40 V; IC=0 −−100 nA
V
= 40 V; IC= 0; T
CB
= 150 °C −−50 µA
amb
VCE= 30 V; IB=0 −−100 nA
current
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
=5V; IC= 500 mA 300 − 900
V
CE
V
=5V; IC=1A 200 −−
CE
collector-emitter saturation
voltage
IC= 100 mA; IB=1mA −−200 mV
= 500 mA; IB=50mA −−250 mV
I
C
I
= 1 A; IB= 100 mA −−500 mV
C
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 260 <500 mΩ
base-emitter saturation
IC= 1 A; IB= 100 mA −−1.2 V
voltage
V
BEon
base-emitter turn-on
VCE=5V; IC=1A −−1.1 V
voltage
f
T
C
c
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz 150 −−MHz
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz −−10 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Nov 27 3
Page 4
Philips Semiconductors Product specification
40 V low V
1000
handbook, halfpage
h
FE
800
600
400
200
0
−1
10
VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150°C.
=25°C.
= −55 °C.
NPN transistor
CEsat
(1)
(2)
(3)
110
PBSS4140S
10
MHC078
3
IC (mA)
4
10
MHC077
2
10
10
3
IC (mA)
4
10
10
handbook, halfpage
V
BE
(V)
1
−1
10
−1
10
(1)
(2)
(3)
110
2
10
VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
10
MHC079
3
IC (mA)
3
10
handbook, halfpage
V
CEsat
(mV)
2
10
10
1
110
IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
(1)
(2)
(3)
2
10
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
10
MHC080
3
IC (mA)
4
10
2
10
handbook, halfpage
R
CEsat
(Ω)
10
1
(1)
(2)
−1
4
10
10
−1
10
110
(3)
2
10
IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 27 4
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
Page 5
Philips Semiconductors Product specification
40 V low V
400
handbook, halfpage
f
T
(MHz)
300
200
100
0
0 1000
VCE=10V.
CEsat
200 400
NPN transistor
MHC081
600 800
IC (mA)
PBSS4140S
Fig.6 Transition frequency as a function of
collector current.
2001 Nov 27 5
Page 6
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4140S
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads SOT54
c
E
d
1
D
2
A L
b
e
1
e
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
A
5.2
mm
5.0
OUTLINE
VERSION
SOT54 TO-92 SC-43
b
0.48
0.40
b
c
D
d
1
0.66
0.45
0.40
4.8
4.4
0.56
IEC JEDEC EIAJ
E
1.7
4.2
1.4
3.6
REFERENCES
2.54
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
2.5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
2001 Nov 27 6
Page 7
Philips Semiconductors Product specification
40 V low V
DATA SHEET STATUS
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
NPN transistor
CEsat
PRODUCT
(1)
STATUS
PBSS4140S
(2)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Nov 27 7
Page 8
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp8 Date of release:2001 Nov 27 Document order number: 9397 750 08839
SCA73
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