Philips PBSS4140S User Manual
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M3D186
PBSS4140S
40 V low V
Product specification 2001 Nov 27
CEsat
NPN transistor
Philips Semiconductors Product specification
40 V low V
CEsat
NPN transistor
FEATURES
• High power dissipation (830 mW)
• Ultra low collector-emitter saturation voltage
• 1 A continuous current
• High current switching
• Improved device reliability due to reduced heat
generation.
APPLICATIONS
• Medium power switching and muting
• Linear regulators
• DC/DC converter
• LCD back-lighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low V
transistor in a SOT54 plastic package.
CEsat
PNP complement: PBSS5140S.
PBSS4140S
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
handbook, halfpage
collector-emitter voltage 40 V
collector current (DC) 1 A
peak collector current 2 A
equivalent on-resistance <500 mΩ
1 base
2 collector
3 emitter
1
2
3
MAM459
2
1
3
MARKING
TYPE NUMBER MARKING CODE
Fig.1 Simplified outline (SOT54) and symbol.
PBSS4140S S4140S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 1A
total power dissipation T
≤ 25 °C; note 1 − 830 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
2001 Nov 27 2
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS4140S
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 150 K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated and standard footprint.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
collector-base cut-off
current
collector-emitter cut-off
VCB= 40 V; IC=0 −−100 nA
V
= 40 V; IC= 0; T
CB
= 150 °C −−50 µA
amb
VCE= 30 V; IB=0 −−100 nA
current
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
=5V; IC= 500 mA 300 − 900
V
CE
V
=5V; IC=1A 200 −−
CE
collector-emitter saturation
voltage
IC= 100 mA; IB=1mA −−200 mV
= 500 mA; IB=50mA −−250 mV
I
C
I
= 1 A; IB= 100 mA −−500 mV
C
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 260 <500 mΩ
base-emitter saturation
IC= 1 A; IB= 100 mA −−1.2 V
voltage
V
BEon
base-emitter turn-on
VCE=5V; IC=1A −−1.1 V
voltage
f
T
C
c
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz 150 −−MHz
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz −−10 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Nov 27 3
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