Page 1
查询PBSS4140DPN供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D302
PBSS4140DPN
40 V low V
CEsat
NPN/PNP
transistor
Product specification 2001 Dec 13
Page 2
Philips Semiconductors Product specification
40 V low V
CEsat
NPN/PNP transistor
FEATURES
• 600 mW total power dissipation
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Replaces two SOT23 packaged low V
CEsat
transistors
on same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
PBSS4140DPN
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
TR1 NPN −−
TR2 PNP −−
R
CEsat
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
collector-emitter voltage 40 V
peak collector current 1 A
peak collector current 2 A
equivalent on-resistance <500 mΩ
654
645
DESCRIPTION
NPN/PNP lowV
transistor pair in an SC-74 (SOT457)
CEsat
plastic package.
MARKING
TYPE NUMBER MARKING CODE
PBSS4140DPN M2
TR2
123
Top view
TR1
132
MAM445
Fig.1 Simplified outline SC74 (SOT457) and
symbol.
2001 Dec 13 2
Page 3
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4140DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 1A
total power dissipation T
≤ 25 °C; note 1 − 370 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 600 mW
amb
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
in free air; note 1 208 K/W
ambient
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2
.
2001 Dec 13 3
Page 4
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4140DPN
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
collector-base cut-off current VCB=40V; IE=0 −−100 nA
V
=40V; IE= 0; Tj= 150 °C −−50 µA
CB
collector-emitter cut-off current VCE=30V; IB=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
collector-emitter saturation
voltage
IC= 100 mA; IB=1mA −−200 mV
I
= 500 mA; IB=50mA −−250 mV
C
I
= 1 A; IB= 100 mA −−500 mV
C
NPN transistor
h
FE
V
BEsat
V
BEon
R
CEsat
f
T
C
c
DC current gain VCE=5V; IC= 500 mA 300 − 900
V
=5V; IC=1A 200 −−
CE
base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
base-emitter turn-on voltage VCE=5V; IC=1A −−1.1 V
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 260 <500 mΩ
transition frequency VCE=10 V; IC= 50 mA; f = 100 MHz 150 −−MHz
collector capacitance VCB=10V; IE=Ie= 0; f = 1 MHz −−10 pF
PNP transistor
h
FE
V
BEsat
V
BEon
R
CEsat
f
T
DC current gain VCE= −5 V; IC= −100 mA 300 − 800
= −5 V; IC= −500 mA 250 −−
V
CE
V
= −5 V; IC= −1 A 160 −−
CE
base-emitter saturation voltage IC= −1 A; IB= −50 mA −−−1.1 V
base-emitter turn-on voltage VCE= −5 V; IC= −1A −−−1.0 V
equivalent on-resistance IC= −500 mA; IB−50 mA; note 1 − 300 <500 mΩ
transition frequency VCE= −10 V; IC= −50 mA;
150 −−MHz
f = 100 MHz
C
c
collector capacitance VCB= −10 V; IE=Ie= 0; f =1 MHz −−12 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Dec 13 4
Page 5
Philips Semiconductors Product specification
40 V low V
1000
handbook, halfpage
h
FE
800
600
400
200
0
−1
10
TR1 (NPN); VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
CEsat
1
NPN/PNP transistor
MLD642
(1)
(2)
(3)
10
2
10
3
10
IC (mA)
4
10
10
handbook, halfpage
V
BE
(V)
1
−1
10
−1
10
TR1 (NPN); VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
PBSS4140DPN
(1)
(2)
(3)
11010
2103
MLD635
IC (mA)
4
10
Fig.2 DC current gain as a function of collector
current; typical values.
3
10
I
C
MLD636
(mA)
3
10
handbook, halfpage
V
CEsat
(mV)
2
10
10
1
11010
TR1 (NPN); IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
(1)
(2)
(3)
2
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
10
MHC126
3
IC (mA)
4
10
2
10
handbook, halfpage
R
CEsat
(Ω)
10
1
(1)
(2)
−1
4
10
10
−1
10
110
(3)
2
10
TR1 (NPN); IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Dec 13 5
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
Page 6
Philips Semiconductors Product specification
40 V low V
400
handbook, halfpage
f
T
(MHz)
300
200
100
0
0 200
TR1 (NPN); VCE=10V.
NPN/PNP transistor
CEsat
400 600 800
PBSS4140DPN
MLD637
1000
IC (mA)
Fig.6 Transition frequency as a function of
collector current; typical values.
2001 Dec 13 6
Page 7
Philips Semiconductors Product specification
40 V low V
1200
handbook, halfpage
h
FE
800
400
0
−1
10
TR2 (PNP); VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
CEsat
−1 −10
NPN/PNP transistor
MLD638
(1)
(2)
(3)
−10
2
−10
3
IC (mA)
−10
4
−10
handbook, halfpage
V
BE
(V)
−1
−1
−10
−1
−10
TR2 (PNP); VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
PBSS4140DPN
−1 −10 −10
MLD639
(1)
(2)
(3)
2
−10
3
−10
4
IC (mA)
Fig.7 DC current gain as a function of collector
current; typical values.
−10
MLD640
3
IC (mA)
3
−10
handbook, halfpage
V
CEsat
(mV)
2
−10
−10
−1
−1 −10 −10
TR2 (PNP); IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
(1)
(3)
(2)
2
−10
Fig.8 Base-emitter voltage as a function of
collector current; typical values.
−10
MHC127
3
IC (mA)
−10
4
2
10
handbook, halfpage
R
CEsat
(Ω)
10
1
(1)
(2)
−1
4
10
−1
−10
−1 −10
−10
(3)
2
TR2 (PNP); IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Dec 13 7
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
Page 8
Philips Semiconductors Product specification
40 V low V
300
handbook, halfpage
f
T
(MHz)
200
100
0
0
TR2 (PNP); VCE= -10 V.
NPN/PNP transistor
CEsat
−200 −1000−400 −600 −800
IC (mA)
PBSS4140DPN
MLD641
Fig.11 Transition frequency as a function of
collector current; typical values.
2001 Dec 13 8
Page 9
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4140DPN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT457
D
y
56
4
E
H
E
AB
X
v M
A
pin 1
index
132
e
DIMENSIONS (mm are the original dimensions)
A
1.1
0.9
A
0.013
0.1
b
cD
p
1
0.40
0.26
0.25
0.10
UNIT
mm
b
3.1
2.7
p
E
1.7
1.3
wBM
0 1 2 mm
scale
H
e
E
3.0
0.95
2.5
A
A
1
L
Qywv
p
0.6
0.33
0.2
0.23
detail X
0.2 0.10.2
Q
c
L
p
OUTLINE
VERSION
SOT457 SC-74
IEC JEDEC EIAJ
REFERENCES
2001 Dec 13 9
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
Page 10
Philips Semiconductors Product specification
40 V low V
DATA SHEET STATUS
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
NPN/PNP transistor
CEsat
PRODUCT
(1)
STATUS
(2)
PBSS4140DPN
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese oratany otherconditionsabove thosegivenin the
Characteristics sectionsof the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation or warrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto resultin personalinjury. Philips
Semiconductorscustomers using orsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofanyof these products,conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesnorepresentations orwarranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Dec 13 10
Page 11
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4140DPN
NOTES
2001 Dec 13 11
Page 12
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part ofany quotation or contract, is believed to be accurate and reliableand may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp12 Date of release: 2001 Dec 13 Document order number: 9397 750 09062
SCA73
Loading...