Philips PBSS4140DPN User Manual
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DATA SH EET
ook, halfpage
M3D302
PBSS4140DPN
40 V low V
CEsat
NPN/PNP
transistor
Product specification 2001 Dec 13
Philips Semiconductors Product specification
40 V low V
CEsat
NPN/PNP transistor
FEATURES
• 600 mW total power dissipation
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Replaces two SOT23 packaged low V
CEsat
transistors
on same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and muting
• LCD backlighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
PBSS4140DPN
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
TR1 NPN −−
TR2 PNP −−
R
CEsat
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
collector-emitter voltage 40 V
peak collector current 1 A
peak collector current 2 A
equivalent on-resistance <500 mΩ
654
645
DESCRIPTION
NPN/PNP lowV
transistor pair in an SC-74 (SOT457)
CEsat
plastic package.
MARKING
TYPE NUMBER MARKING CODE
PBSS4140DPN M2
TR2
123
Top view
TR1
132
MAM445
Fig.1 Simplified outline SC74 (SOT457) and
symbol.
2001 Dec 13 2
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4140DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 2A
peak base current − 1A
total power dissipation T
≤ 25 °C; note 1 − 370 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 1 − 600 mW
amb
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
in free air; note 1 208 K/W
ambient
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm
2
.
2001 Dec 13 3
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4140DPN
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
collector-base cut-off current VCB=40V; IE=0 −−100 nA
V
=40V; IE= 0; Tj= 150 °C −−50 µA
CB
collector-emitter cut-off current VCE=30V; IB=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
collector-emitter saturation
voltage
IC= 100 mA; IB=1mA −−200 mV
I
= 500 mA; IB=50mA −−250 mV
C
I
= 1 A; IB= 100 mA −−500 mV
C
NPN transistor
h
FE
V
BEsat
V
BEon
R
CEsat
f
T
C
c
DC current gain VCE=5V; IC= 500 mA 300 − 900
V
=5V; IC=1A 200 −−
CE
base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
base-emitter turn-on voltage VCE=5V; IC=1A −−1.1 V
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 260 <500 mΩ
transition frequency VCE=10 V; IC= 50 mA; f = 100 MHz 150 −−MHz
collector capacitance VCB=10V; IE=Ie= 0; f = 1 MHz −−10 pF
PNP transistor
h
FE
V
BEsat
V
BEon
R
CEsat
f
T
DC current gain VCE= −5 V; IC= −100 mA 300 − 800
= −5 V; IC= −500 mA 250 −−
V
CE
V
= −5 V; IC= −1 A 160 −−
CE
base-emitter saturation voltage IC= −1 A; IB= −50 mA −−−1.1 V
base-emitter turn-on voltage VCE= −5 V; IC= −1A −−−1.0 V
equivalent on-resistance IC= −500 mA; IB−50 mA; note 1 − 300 <500 mΩ
transition frequency VCE= −10 V; IC= −50 mA;
150 −−MHz
f = 100 MHz
C
c
collector capacitance VCB= −10 V; IE=Ie= 0; f =1 MHz −−12 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Dec 13 4
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