Philips PBSS4130T Technical data

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PBSS4130T
30 V, 1 A NPN low V
Product specification 2003 Nov 27
CEsat
(BISS) transistor
Philips Semiconductors Product specification
30 V, 1 A NPN low V
CEsat
FEATURES
Low collector-emitter saturation voltage V
High collector current capability IC and I
High efficiency leading to less heat generation
Reduced printed-circuit board requirements
Cost effective alternative to MOSFETs in specific
applications.
APPLICATIONS
Power management – DC/DC conversion – Supply line switching – Battery charger – LCD backlighting.
Peripheral driver – Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
NPNBISStransistorinaSOT23plasticpackageproviding ultra low V
CEsat
and R
PNP complement: PBSS5130T.
(BISS) transistor
CM
parameters.
CEsat
CEsat
PBSS4130T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 base 2 emitter 3 collector
handbook, halfpage
collector-emitter voltage 30 V collector current (DC) 1 A peak collector current 3 A equivalent on-resistance 220 m
3
1
21
Top view
MAM255
3
2
MARKING
TYPE NUMBER MARKING CODE
(1)
Fig.1 Simplified outline (SOT23) and symbol.
PBSS4130T *3C
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia. * = W: made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS4130T plastic surface mounted package; 3 leads SOT23
2003 Nov 27 2
Philips Semiconductors Product specification
30 V, 1 A
PBSS4130T
NPN low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
collector-base voltage open emitter 40 V collector-emitter voltage open base 30 V emitter-base voltage open collector 5V collector current (DC) 1A peak collector current 3A peak base current 300 mA total power dissipation T
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
(BISS) transistor
CEsat
25 °C; note 1 300 mW
amb
T
25 °C; note 2 480 mW
amb
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 417 K/W
in free air; note 2 260 K/W
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2003 Nov 27 3
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