Philips PBSS4120T User Guide
PBSS4120T
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D088
PBSS4120T
20 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification |
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2003 Sep 29 |
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Philips Semiconductors |
Product specification |
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20 V, 1 A
PBSS4120T
NPN low VCEsat (BISS) transistor
FEATURES
∙Low collector-emitter saturation voltage VCEsat
∙High collector current capability IC and ICM
∙High efficiency leading to less heat generation
∙Reduced printed-circuit board requirements
∙Cost effective alternative to MOSFETs in specific applications.
APPLICATIONS
∙Power management
–DC/DC conversion
–Supply line switching
–Battery charger
–LCD backlighting.
∙Peripheral driver
–Driver in low supply voltage applications (e.g. lamps and LEDs)
–Inductive load drivers (e.g. relays, buzzers and motors).
DESCRIPTION
NPN BISS transistor in a SOT23 plastic package providing
ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5120T.
MARKING
TYPE NUMBER |
MARKING CODE(1) |
PBSS4120T |
*3B |
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Note
1.* = p: made in Hong Kong.
*= t: made in Malaysia.
*= W: made in China.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
MAX. |
UNIT |
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VCEO |
collector-emitter voltage |
20 |
V |
IC |
collector current (DC) |
1 |
A |
ICM |
peak collector current |
3 |
A |
RCEsat |
equivalent on-resistance |
200 |
mΩ |
PINNING |
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PIN |
DESCRIPTION |
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1 |
base |
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2 |
emitter |
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3 |
collector |
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handbook, halfpage |
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Top view |
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MAM255 |
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Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER |
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PACKAGE |
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NAME |
DESCRIPTION |
VERSION |
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PBSS4120T |
− |
plastic surface mounted package; 3 leads |
SOT23 |
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2003 Sep 29 |
2 |
Philips Semiconductors |
Product specification |
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20 V, 1 A
PBSS4120T
NPN low VCEsat (BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
− |
30 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
20 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
5 |
V |
IC |
collector current (DC) |
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− |
1 |
A |
ICM |
peak collector current |
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3 |
A |
IBM |
peak base current |
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− |
300 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
300 |
mW |
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Tamb ≤ 25 °C; note 2 |
− |
480 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
Notes
1.Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2.Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
in free air; note 1 |
417 |
K/W |
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in free air; note 2 |
260 |
K/W |
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Notes
1.Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2.Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2003 Sep 29 |
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