Philips PBSS4120T User Guide
查询PBSS4120T供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D088
PBSS4120T
20 V, 1 A
NPN low V
Product specification 2003 Sep 29
CEsat
(BISS) transistor
Philips Semiconductors Product specification
20 V, 1 A
NPN low V
CEsat
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability IC and I
• High efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• Cost effective alternative to MOSFETs in specific
applications.
APPLICATIONS
• Power management
– DC/DC conversion
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral driver
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load drivers (e.g. relays, buzzers and
motors).
(BISS) transistor
CEsat
CM
PBSS4120T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
collector-emitter voltage 20 V
collector current (DC) 1 A
peak collector current 3 A
equivalent on-resistance 200 mΩ
3
3
1
DESCRIPTION
NPNBISStransistorinaSOT23plasticpackageproviding
ultra low V
CEsat
and R
parameters.
CEsat
PNP complement: PBSS5120T.
Top view
21
MAM255
2
MARKING
TYPE NUMBER MARKING CODE
(1)
Fig.1 Simplified outline (SOT23) and symbol.
PBSS4120T *3B
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS4120T − plastic surface mounted package; 3 leads SOT23
2003 Sep 29 2
Philips Semiconductors Product specification
20 V, 1 A
PBSS4120T
NPN low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
collector-base voltage open emitter − 30 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 3A
peak base current − 300 mA
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
(BISS) transistor
CEsat
≤ 25 °C; note 1 − 300 mW
amb
T
≤ 25 °C; note 2 − 480 mW
amb
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 417 K/W
in free air; note 2 260 K/W
Notes
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2003 Sep 29 3
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