Philips PBSS3515M Technical data

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DISCRETE SEMICONDUCTORS

DATA SH EET

M3D883

BOTTOM VIEW

PBSS3515M

15 V, 0.5 A
PNP low V

Product specification 2003 Jul 22

CEsat

(BISS) transistor

Philips Semiconductors Product specification

15 V, 0.5 A
PNP low V

CEsat

FEATURES

• Low collector-emitter saturation voltage V

• High collector current capability IC and I

• High efficiency leading to reduced heat generation

• Reduced printed-circuit board requirements.

APPLICATIONS

• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD backlighting.

• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps

and LEDs).

– Inductive load drivers (e.g. relays, buzzers and

motors).

DESCRIPTION

Low V

PNP transistor in a SOT883 leadless ultra

CEsat

small plastic package.
NPN complement: PBSS2515M.

(BISS) transistor

CEsat

CM

PBSS3515M

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CM

R

CEsat

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

collector-emitter voltage −15 V
collector current (DC) −500 mA
peak collector current −1A
equivalent on-resistance <500 mΩ

2

1

Bottom view

3

MAM469

3

1

2

MARKING

TYPE NUMBER MARKING CODE

PBSS3515M DB

Fig.1 Simplified outline (SOT883) and symbol.

2003 Jul 22 2

Philips Semiconductors Product specification

15 V, 0.5 A

PBSS3515M

PNP low V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

Notes

1. Refer to SOT883 standard mounting conditions.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm

copper strip line.

3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

collector-base voltage open emitter −−15 V
collector-emitter voltage open base −−15 V
emitter-base voltage open collector −−6V
collector current (DC) notes 1 and 2 −−500 mA
peak collector current −−1A
peak base current −−100 mA
total power dissipation T

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

(BISS) transistor

CEsat

≤ 25 °C; notes 1 and 2 − 250 mW

amb

T

≤ 25 °C; note 1 and 3 − 430 mW

amb

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to
ambient

in free air; notes 1 and 2 500 K/W
in free air; notes 1, 3 and 4 290 K/W

Notes

1. Refer to SOT883 standard mounting conditions.

2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm

copper strip line.

3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

4. Operated under pulsed conditions: duty cycle δ≤20%, pulse width tp≤ 30 ms.

Soldering

Reflow soldering is the only recommended soldering method.

2003 Jul 22 3

Philips Semiconductors Product specification

15 V, 0.5 A

PBSS3515M

PNP low V

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

R

CEsat

V

BEsat

V

BEon

f

T

C

c

collector-base cut-off current VCB= −15 V; IE=0 −−−100 nA

emitter-base cut-off current VEB= −5 V; IC=0 −−−100 nA
DC current gain VCE= −2 V; IC= −10 mA 200 −−

collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−−25 mV

equivalent on-resistance IC= −500 mA; IB= −50 mA; note 1 − 300 <500 mΩ
base-emitter saturation voltage IC= −500 mA; IB= −50 mA; note 1 −−−1.1 V
base-emitter turn-on voltage VCE= −2 V; IC= −100 mA; note 1 −−−0.9 V
transition frequency IC= −100 mA; VCE= −5V;

collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz −−10 pF

(BISS) transistor

CEsat

V

= −15 V; IE= 0; Tj= 150 °C −−−50 µA

CB

V

= −2 V; IC= −100 mA; note 1 150 −−

CE

= −2 V; IC= −500 mA; note 1 90 −−

V

CE

I

= −200 mA; IB= −10 mA; note 1 −−−150 mV

C

= −500 mA; IB= −50 mA; note 1 −−−250 mV

I

C

100 280 − MHz

f = 100 MHz

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2003 Jul 22 4

Philips Semiconductors Product specification

15 V, 0.5 A
PNP low V

600

handbook, halfpage

h

FE

400

200

0

−1

−10

VCE= −2V.
(1) T

(2) T
(3) T

amb
amb
amb

= 150°C.
=25°C.
= −55 °C.

(BISS) transistor

CEsat

(1)

(2)

(3)

−1 −10

−10

2

IC (mA)

MLD665

−10

PBSS3515M

2

IC (mA)

MLD667

−10

3

−1200

handbook, halfpage

V

BE

(mV)

−1000

(1)

−800

(2)

−600

(3)

−400

3

−200

−1

−1−10

−10 −10

VCE= −2V.
(1) T

(2) T
(3) T

amb
amb
amb

= −55 °C.
=25°C.
= 150 °C.

Fig.2 DC current gain as a function of collector

current; typical values.

−10

MLD669

2

IC (mA)

3

−10

handbook, halfpage

V

CEsat
(mV)

2

−10

−10

−1

−1

−10

IC/IB= 20.
(1) T

(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

−1 −10

(1)

(2)

(3)

−10

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

2

IC (mA)

MLD668

−10

3

−1200

handbook, halfpage

V

BEsat

(mV)

−1000

(1)

−800

−600

(2)

(3)

−400

3

−200

−1

−1−10

−10 −10

IC/IB= 20.
(1) T

(2) T
(3) T

amb
amb
amb

= 150 °C.
=25°C.
= −55 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

2003 Jul 22 5

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

Philips Semiconductors Product specification

15 V, 0.5 A
PNP low V

−1200

handbook, halfpage

I

C

(mA)

−800

−400

0

T

=25°C.

amb

(1) IB= −7 mA.
(2) IB= −6.3 mA.
(3) IB= −5.6 mA.
(4) IB= −4.9 mA.

Fig.6 Collector current as a function of

−2 −10

0

collector-emitter voltage; typical values.

(BISS) transistor

CEsat

(4)

−4 −6 −8

(5) IB= −4.2 mA.
(6) IB= −3.5 mA.
(7) IB= −2.8 mA.
(8) IB= −2.1 mA.

MLD666

(2)(3)

(1)

(5)
(6)

(7)

(8)

(9)

(10)

VCE (V)

(9) IB= −1.4 mA.
(10) IB= −0.7 mA.

PBSS3515M

−10

MLD670

(1)

(3)(2)

2

IC (mA)

3

10

handbook, halfpage

R

CEsat

(Ω)

2

10

10

1

−1

10

−1

−10

IC/IB= 20.
(1) T

amb

(2) T

amb

(3) T

amb

= 150 °C.
=25°C.
= −55 °C.

−1 −10

Fig.7 Collector-emitter equivalent on-resistance

as a function of collector current; typical
values.

−10

3

2003 Jul 22 6

Philips Semiconductors Product specification

15 V, 0.5 A

PBSS3515M

PNP low V

PACKAGE OUTLINE

Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883

e

(BISS) transistor

CEsat

L

2

b

1

L

1

3

b

1

e

1

E

DIMENSIONS (mm are the original dimensions)

A

(1)

UNIT

A

0.50

mm

0.46

Note

1. Including plating thickness

OUTLINE
VERSION

SOT883 SC-101

max.

0.03

1

0.20

0.12

bb

IEC JEDEC JEITA

1

0.55

0.47

DE

0.62

1.02

0.55

0.95

e

eLL

0.35 0.65

REFERENCES

1

0.30

0.22

A

A

1

D

1

0.30

0.22

0 0.5 1 mm

scale

EUROPEAN

PROJECTION

ISSUE DATE

03-02-05
03-04-03

2003 Jul 22 7

Philips Semiconductors Product specification

15 V, 0.5 A

PBSS3515M

PNP low V

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For datasheets describingmultipletype numbers,the highest-level productstatus determines thedata sheetstatus.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(BISS) transistor

CEsat

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting valuesdefinition  Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance.When theproduct is infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductorsassumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2003 Jul 22 8

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613514/01/pp9 Date of release: 2003 Jul 22 Document order number: 9397 75011558

SCA75