Philips PBSS3515M Technical data
PBSS3515M
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
PBSS3515M
15 V, 0.5 A
PNP low VCEsat (BISS) transistor
Product specification |
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2003 Jul 22 |
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Philips Semiconductors |
Product specification |
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15 V, 0.5 A
PBSS3515M
PNP low VCEsat (BISS) transistor
FEATURES
∙Low collector-emitter saturation voltage VCEsat
∙High collector current capability IC and ICM
∙High efficiency leading to reduced heat generation
∙Reduced printed-circuit board requirements.
APPLICATIONS
∙Power management:
–DC-DC converter
–Supply line switching
–Battery charger
–LCD backlighting.
∙Peripheral driver:
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
MAX. |
UNIT |
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VCEO |
collector-emitter voltage |
−15 |
V |
IC |
collector current (DC) |
−500 |
mA |
ICM |
peak collector current |
−1 |
A |
RCEsat |
equivalent on-resistance |
<500 |
mΩ |
PINNING |
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PIN |
DESCRIPTION |
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1 |
base |
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2 |
emitter |
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3 |
collector |
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–Driver in low supply voltage applications (e.g. lamps and LEDs).
–Inductive load drivers (e.g. relays, buzzers and motors).
DESCRIPTION
Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package.
NPN complement: PBSS2515M.
MARKING
TYPE NUMBER |
MARKING CODE |
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PBSS3515M |
DB |
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handbook, halfpage
3
2
3 1
1
2
Bottom view |
MAM469 |
Fig.1 Simplified outline (SOT883) and symbol.
2003 Jul 22 |
2 |
Philips Semiconductors |
Product specification |
|
|
15 V, 0.5 A
PBSS3515M
PNP low VCEsat (BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCBO |
collector-base voltage |
open emitter |
− |
−15 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
−15 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
−6 |
V |
IC |
collector current (DC) |
notes 1 and 2 |
− |
−500 |
mA |
ICM |
peak collector current |
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− |
−1 |
A |
IBM |
peak base current |
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− |
−100 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; notes 1 and 2 |
− |
250 |
mW |
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Tamb ≤ 25 °C; note 1 and 3 |
− |
430 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Tamb |
operating ambient temperature |
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−65 |
+150 |
°C |
Notes
1.Refer to SOT883 standard mounting conditions.
2.Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm copper strip line.
3.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to |
in free air; notes 1 and 2 |
500 |
K/W |
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ambient |
in free air; notes 1, 3 and 4 |
290 |
K/W |
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Notes
1.Refer to SOT883 standard mounting conditions.
2.Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 μm copper strip line.
3.Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
4.Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Jul 22 |
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