Philips PBSS3515F Technical data
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M3D425
PBSS3515F
15 V low V
Product specification
Supersedes data of 2001 Jan 26
CEsat
PNP transistor
2001 Sep 21
Philips Semiconductors Product specification
15 V low V
CEsat
PNP transistor
FEATURES
• Low collector-emitter saturation voltage
• High current capabilities
• Improved thermal behaviour due to flat leads.
APPLICATIONS
• General purpose switching and muting
• Low frequency driver circuits
• LCD backlighting
• Audio frequency general purpose amplifier applications
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low V
transistor in a SC-89 (SOT490) plastic
CEsat
package.
NPN complement: PBSS2515F.
PBSS3515F
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
handbook, halfpage
emitter-collector voltage −15 V
collector current (DC) −500 mA
peak collector current −1A
equivalent on-resistance <500 mΩ
1 base
2 emitter
3 collector
3
1
3
MARKING
12
Top view
MAM411
2
TYPE NUMBER MARKING CODE
PBSS3515F 2B
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−15 V
collector-emitter voltage open base −−15 V
emitter-base voltage open collector −−6V
collector current (DC) −−500 mA
peak collector current −−1A
peak base current −−100 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2001 Sep 21 2
Philips Semiconductors Product specification
15 V low V
PNP transistor
CEsat
PBSS3515F
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
in free air 500 K/W
ambient
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BE
f
T
collector-base cut-off current VCB= −15 V; IE=0 −−−100 nA
V
= −15 V; IE= 0; Tj= 150 °C −−−50 µA
CB
emitter-base cut-off current VEB= −5 V; IC=0 −−−100 nA
DC current gain VCE= −2 V; IC= −10 mA 200 −−
V
= −2 V; IC= −100 mA; note 1 150 −−
CE
= −2 V; IC= −500 mA; note 1 90 −−
V
CE
collector-emitter saturation
voltage
IC= −10 mA; IB= −0.5 mA −−−25 mV
= −200 mA; IB= −10 mA −−−150 mV
I
C
I
= −500 mA; IB= −50 mA; note 1 −−−250 mV
C
equivalent on-resistance IC= −500 mA; IB= −50 mA; note 1 − 300 <500 mΩ
base-emitter saturation voltage IC= −500 mA; IB= −50 mA; note 1 −−−1.1 V
base-emitter turn-on voltage VCE= −2 V; IC= −100 mA; note 1 −−−0.9 V
transition frequency IC= −100 mA; VCE= −5V;
100 280 − MHz
f = 100 MHz
C
c
collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz −−10 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Sep 21 3
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