Philips PBSS2540F Technical data
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M3D425
PBSS2540F
40 V low V
Product specification 2001 Oct 31
CEsat
NPN transistor
Philips Semiconductors Product specification
40 V low V
CEsat
NPN transistor
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved thermal behaviour due to flat leads
• Enhanced performance over SOT23 general purpose
transistors.
APPLICATIONS
• General purpose switching and muting
• Low frequency driver circuits
• Audio frequency general purpose amplifier applications
• Battery driven equipment (mobile phones, video
cameras, hand-held devices).
DESCRIPTION
NPN low V
transistor in a SC-89 (SOT490) plastic
CEsat
package.
PNP complement: PBSS3540F.
MARKING
PBSS2540F
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
collector-emitter voltage 40 V
collector current (DC) 500 mA
peak collector current 1 A
equivalent on-resistance <500 mΩ
3
12
Top view
MAM410
3
1
2
TYPE NUMBER MARKING CODE
PBSS2540F 2C
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 500 mA
peak collector current − 1A
peak base current − 100 mA
total power dissipation T
≤ 25 °C − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
2001 Oct 31 2
Philips Semiconductors Product specification
40 V low V
NPN transistor
CEsat
PBSS2540F
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-a
thermal resistance from junction to ambient in free air 500 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
f
T
C
c
collector-base cut-off current VCB= 30 V; IE=0 −−100 nA
V
= 30 V; IE= 0; Tj= 150 °C −−50 µA
CB
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=2V; IC=10mA 200 −−
V
=2V; IC= 100 mA; note 1 100 −−
CE
V
=2V; IC= 500 mA; note 1 50 −−
CE
collector-emitter saturation
voltage
IC= 10 mA; IB= 0.5 mA −−50 mV
I
= 100 mA; IB=5mA −−100 mV
C
I
= 200 mA; IB=10mA −−200 mV
C
I
= 500 mA; IB= 50 mA; note 1 −−250 mV
C
equivalent on-resistance IC= 500 mA; IB= 50 mA; note 1 − 380 <500 mΩ
base-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1 −−1.2 V
base-emitter turn-on voltage VCE=2V; IC= 100 mA; note 1 −−1.1 V
transition frequency IC= 100 mA; VCE= 5 V; f = 100 MHz 250 450 − MHz
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz −−6pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Oct 31 3
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