Philips PBR941 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ok, halfpage
M3D088
PBR941
UHF wideband transistor
Product specification
Supersedes data of 1998 May 08
File under Discrete Semiconductors, SC14
1998 Aug 10
Philips Semiconductors Product specification
UHF wideband transistor PBR941
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
QUICK REFERENCE DATA
PINNING - SOT23
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
Marking code: V0.
3
21
Fig.1 Simplified outline and symbol.
3
1
2
MAM255
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
re
f
T
G
UM
F noise figure Γ
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz 0.3 − pF
transition frequency IC= 15 mA; VCE=6V; fm= 1 GHz 8 − GHz
maximum unilateral power gain IC= 15 mA; VCE= 6 V; f = 1 GHz;
T
=25°C
amb
= Γ
S
; IC= 5 mA; VCE=6V;
opt
15 − dB
1.4 − dB
f = 1 GHz
P
R
tot
th j-s
total power dissipation Ts=60°C; note 1 − 360 mW
thermal resistance from junction
P
= 360 mW − 320 K/W
tot
to soldering point
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1998 Aug 10 2
Philips Semiconductors Product specification
UHF wideband transistor PBR941
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 10 V
emitter-base voltage open collector − 1.5 V
collector current (DC) − 50 mA
average collector current − 50 mA
total power dissipation Ts=60°C; note 1 − 360 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction
P
= 360 mW; Ts=60°C; note 1 320 K/W
tot
to soldering point; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Aug 10 3
Philips Semiconductors Product specification
UHF wideband transistor PBR941
CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
DC characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
AC characteristics
C
re
f
T
G
UM
F noise figure Γ
collector-base breakdown voltage IC= 100 µA; IE=0 20 −−V
collector-emitter breakdown voltage IC= 100 µA; IB=0 10 −−V
emitter-base breakdown voltage IE=10µA; IC= 0 1.5 −−V
collector-base leakage current VCB=10V; IE=0 −−100 nA
emitter-base leakage current VEB=1V; IC=0 −−100 nA
DC current gain IC= 5 mA; VCE= 6 V 50 100 200
I
= 15 mA; VCE=6V − 100 −
C
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.3 − pF
transition frequency IC= 15 mA; VCE= 6 V; f = 1 GHz − 8 − GHz
maximum unilateral power gain;
note 1
IC= 15 mA; VCE=6V;
T
=25°C; f = 1 GHz
amb
I
= 15 mA; VCE=6V;
C
T
=25°C; f = 2 GHz
amb
= Γ
S
; IC= 5 mA; VCE=6V;
opt
− 15 − dB
− 9.5 − dB
− 1.4 − dB
f = 1 GHz
Γ
= Γ
S
; IC= 5 mA; VCE=6V;
opt
− 2 − dB
f = 2 GHz
Note
1. G
is the maximum unilateral power gain, assuming s12 is zero.
UM
2
S
G
UM
10
-------------------------------------------------------------1S
–()1S
21
2
11
–()
dBlog=
2
22
1998 Aug 10 4
Philips Semiconductors Product specification
UHF wideband transistor PBR941
150
MDA871
Ts (°C)
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100
Fig.2 Power derating as a function of soldering
point temperature.
200
120
handbook, halfpage
h
FE
80
40
0
0
VCE=6V.
10 50
20 30 40
MDA872
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
0.5
handbook, halfpage
C
re
(pF)
0.4
0.3
0.2
0.1
0
04
IC= 0; f= 1 MHz.
812
V
CB
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MDA873
(V)
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
01020
VCE= 6 V; f = 1 GHz; T
amb
=25°C.
30
Fig.5 Transition frequency as a function of
collector current; typical values.
MDA874
IC (mA)
40
1998 Aug 10 5
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