Philips MZ0912B50Y Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

MZ0912B50Y

NPN microwave power transistor

Product specification
Supersedes data of November 1994

1997 Feb 18

Philips Semiconductors Product specification

NPN microwave power transistor MZ0912B50Y

FEATURES

• Interdigitated structure provides
high emitter efficiency

• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR

• Gold metallization realizes very
stable characteristics and excellent
lifetime

• Multicell geometry gives good
balance of dissipated power and
low thermal resistance

• Input and output matching cell
allows an easier design of circuits.

APPLICATIONS

Common base, class C, broadband,
pulse power amplifier from
960 to 1215 MHz for TACAN
application.

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common base class C

mb

broadband amplifier.

MODE OF

OPERATION

Class C;

=10µs; δ =1%

t

p

f

(GHz)

V

(V)

CC

0.960 to 1.215 50 >50 >7 >42 see Figs 6

PINNING - SOT443A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

handbook, halfpage

1

2

Top view

Fig.1 Simplified outline and symbol.

P

(W)

G

L

(dB)

η

p

C

(%)

Zi/ZL (Ω)

and 7

c

b

3

MAM314

e

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 2

Philips Semiconductors Product specification

NPN microwave power transistor MZ0912B50Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 20 V
collector-emitter voltage RBE=0Ω−60 V
emitter-base voltage open collector − 3V
collector current (DC) tp≤ 10 µs; δ≤10% − 3A
total power dissipation (peak power) Tmb=75°C; tp≤ 10 µs; δ≤10% − 150 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

180

handbook, halfpage

P

tot

(W)

120

60

0

−

50 200

tp=10µs; δ = 10%; P

= 150 W.

100

Tmb (°C)

0

tot max

Fig.2 Power derating curve.

MGL051

1997 Feb 18 3

Philips Semiconductors Product specification

NPN microwave power transistor MZ0912B50Y

THERMAL CHARACTERISTICS

T

= 125 °C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th j-h

Notes

1. See

2. Equivalent thermal impedance under nominal pulse microwave operating conditions; tp=10µs; δ = 10%.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

CES

I

EBO

thermal resistance from junction to mounting base CW 4.9 K/W
thermal resistance from mounting base to heatsink CW; note 1 0.2 K/W
thermal impedance from junction to heatsink notes 1 and 2 0.85 K/W

“Mounting recommendations in the General part of handbook SC19a”

.

collector cut-off current VCB=65V; IE= 0 20 mA

V

=50V; IE=0 2 mA

CB

collector cut-off current VCE=60V; RBE=0Ω 20 mA
emitter cut-off current VEB= 1.5 V; IC= 0 200 µA

APPLICATION INFORMATION

Microwave performance up to T

=25°C measured in the test jig as shown in Fig.3 and working in class C broadband

mb

mode in pulse; note 1.

MODE OF OPERATION

Class C;

=10µs; δ = 10%

t

p

f

(GHz)

0.960 to 1.215 50 >50

V

(V)

CC

(2)

P

L

(W)

typ. 60

G

p

(dB)

>7

typ. 8

η

C

(%)

>42

typ. 44

Zi/Z

L

(Ω)

see Figs 6
and 7

Notes

1. Operating conditions and performance for other pulse formats can be made available on request.

2. V

during pulse.

CC

List of components (see Fig.3).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L1, L2 0.65 mm diameter copper wire − total length = 12 mm;

−

height of loop = 9 mm

L3 4 turns 0.65 mm diameter

− int. dia. 3 mm; l = 5 mm −

copper wire;
C1 capacitor 100 pF − ATC, ref. 100A101KP50X
C2 tantalum capacitor 10 µF; 50 V −−
C3 electrolytic capacitor 470 µF; 63 V −−
C4 feedthrough bypass capacitor −− Erie, ref. 1250-003
C5, C6 variable gigatrim capacitor 0.6 to 4.5 pF − Tekelec, ref. 727.1

1997 Feb 18 4