Philips MTB10010U Datasheet

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DATA SH EET

MTB10010U

NPN microwave power transistor

Product specification
Supersedes data of November 1994

1997 Feb 20

Philips Semiconductors Product specification

NPN microwave power transistor MTB10010U

FEATURES

• Input prematching cell allows an
easier design of circuits

• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR

• Interdigitated structure provides
high emitter efficiency

• Gold metallization realizes very
good characteristics stability and
excellent lifetime

• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.

APPLICATIONS

Common base class C narrowband
pulsed power amplifiers at 1030 MHz
for IFF applications.

DESCRIPTION

NPN silicon planar epitaxial
microwave transistor with internal
input prematching cell in a SOT440A
metal ceramic package with base
connected to flange.

QUICK REFERENCE DATA

Microwave performance for T

=25°C in a common base class C

mb

narrowband amplifier.

MODE OF

OPERATION

Class C t

CONDITIONS

=1µs;

p

f

V

CC

(MHz)

(V)

1030 24 >9.5 >9.5 >50 see

δ =1%

PINNING - SOT440A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

handbook, 4 columns

Top view

Marking code: 10010U.

1

3

2

P

L

(W)

MAM131

b

G

PO

(dB)

η

(%)

Zi/Z

C

L

(Ω)

Figs 5
and 6

c

e

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 20 2

Philips Semiconductors Product specification

NPN microwave power transistor MTB10010U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.3 mm from ceramic.

collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0Ω−40 V
emitter-base voltage open collector − 3V
collector current (average) − 0.75 A
total power dissipation Tmb<75°C; tp=1µs; δ =1% − 36 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

50

handbook, halfpage

P

tot

(W)

40

30

20

10

0

–50 50

P

= 36W under the nominal pulse conditions.

tot max

0 100 200

150

Fig.2 Power derating curve.

MGA037

Tmb (

o

250
C)

12

handbook, halfpage

P

L

(W)

8

4

0

0

VCC= 24V; tp=1µs; δ =1%; f = 1030 MHz.

0.5

12

1.5

Fig.3 Load power as a function of input power.

MGA038

Pi (W)

1997 Feb 20 3

Philips Semiconductors Product specification

NPN microwave power transistor MTB10010U

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th j-mb

Note

1. See “

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

CES

I

EBO

thermal resistance from junction to mounting base Tj= 100 °C 10.5 K/W
thermal resistance from mounting base to heatsink note 1 0.7 K/W
thermal impedance from junction to mounting base tp=1µs; δ = 1%;

2.5 K/W

note 1

Mounting recommendations in the General part of handbook SC19a”

.

collector cut-off current VCB=30V; IE=0 45 µA
collector cut-off current VCE=30V; RBE= 0 300 µA
emitter cut-off current VEB= 1.5 V; IC = 0 4.5 µA

APPLICATION INFORMATION

Microwave performance up to T

=25°C and working in pulsed conditions in a narrowband test circuit as shown in

mb

Fig.4.

MODE OF

OPERATION

Class C t

CONDITIONS

=1µs; δ = 1 % 1030 24 >9.5;

p

f

(MHz)

V

CC

(V)

typ. 11

P

(W)

L

G

po

(dB)

>9.5;
typ. 10

η

C

(%)

>50;
typ. 55

Zi/Z

L

(Ω)

see Figs 5 and 6

List of components (see Fig.4)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L1 0.4 mm diameter copper wire − rectangular loop −
C1 tuning capacitor 0.5 − 5pF − Tekelec 5855
C2 chip capacitor 3 pF − Eurofarad CEC 23
C3 chip capacitor 10 pF − Eurofarad CEC 23
C4 chip capacitor 47 pF − Eurofarad CEC 23
C5 tantalum capacitor 10 µF, 50 V −−
C6 feedthrough bypass capacitor −− Erie 1250-003
C7 capacitor 220µF, 63 V −−

1997 Feb 20 4