Philips MMBT3906 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D088
MMBT3906
PNP switching transistor
Product specification 2000 Apr 11
Philips Semiconductors Product specification
PNP switching transistor MMBT3906
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complement: MMBT3904.
MARKING
TYPE NUMBER MARKING CODE
(1)
MMBT3906 7B∗
Note
1. ∗ = p: made in Hong Kong.
∗ = t: made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−6V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Apr 11 2
Philips Semiconductors Product specification
PNP switching transistor MMBT3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
Switching times (between 10% and 90% levels); (see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB= −30 V −−50 nA
emitter cut-off current IC= 0; VEB= −6V −−50 nA
DC current gain VCE= −1 V; (see Fig.2)
I
= −0.1 mA 60 −
C
I
= −1mA 80 −
C
I
=−10 mA 100 300
C
I
= −50 mA 60 −
C
I
= −100 mA 30 −
C
collector-emitter saturation
voltage
base-emitter saturation
voltage
IC= −10 mA; IB= −1mA −−200 mV
= −50 mA; IB= −5mA −−200 mV
I
C
IC= −10 mA; IB= −1mA −−850 mV
I
= −50 mA; IB= −5 mA −−950 mV
C
collector capacitance IE=ie= 0; VCB= −5 V; f = 1 MHz − 4.5 pF
emitter capacitance IC=ic= 0; VEB= −500 mV; f = 1 MHz − 10 pF
transition frequency IC= −10 mA; VCE= −20 V;
250 − MHz
f = 100 MHz
= −100 µA; VCE= −5V;RS=1kΩ;
C
− 4dB
f = 10 Hz to 15.7 kHz
turn-on time I
delay time − 35 ns
= −10 mA; I
Con
I
=1mA
Boff
Bon
= −1 mA;
− 65 ns
rise time − 35 ns
turn-off time − 300 ns
storage time − 225 ns
fall time − 75 ns
2000 Apr 11 3
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