Philips MMBT2222A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D088
MMBT2222A
NPN switching transistor
Product specification 2000 Apr 11
Philips Semiconductors Product specification
NPN switching transistor MMBT2222A
FEATURES
• High current (max. 600 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT2907A.
MARKING
TYPE NUMBER MARKING CODE
(1)
MMBT2222A 7C∗
Note
1. ∗ = p: made in Hong Kong.
∗ = t: made in Malaysia.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 75 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6V
collector current (DC) − 600 mA
peak collector current − 800 mA
peak base current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Apr 11 2
Philips Semiconductors Product specification
NPN switching transistor MMBT2222A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure I
Switching times (between 10% and 90% levels); (see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=60V − 10 nA
I
= 0; VCB=60V; Tj= 125 °C − 10 µA
E
emitter cut-off current IC= 0; VEB=5V − 10 nA
DC current gain IC= 0.1 mA; VCE=10V 35 −
I
= 1 mA; VCE=10V 50 −
C
I
= 10 mA; VCE=10V 75 −
C
I
= 10 mA; VCE=10V;
C
T
= −55 °C
amb
I
= 150 mA; VCE= 10 V 100 300
C
= 150 mA; VCE=1V 50 −
I
C
I
= 500 mA; VCE=10V 40 −
C
35 −
collector-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 − 300 mV
I
= 500 mA; IB= 50 mA; note 1 − 1V
C
base-emitter saturation voltage IC= 150 mA; IB= 15 mA; note 1 0.6 1.2 V
I
= 500 mA; IB= 50 mA; note 1 − 2V
C
collector capacitance IE=ie= 0; VCB=10V;
− 8pF
f = 1 MHz
emitter capacitance IC=ic= 0; VEB= 500 mV;
− 25
f = 1 MHz
transition frequency IC= 20 mA; VCE=20V;
300 − MHz
f = 100 MHz
= 100 µA; VCE=5V;
C
− 4dB
RS=1kΩ; f = 1 kHz
turn-on time I
delay time − 15 ns
= 150 mA; I
Con
I
= −15 mA
Boff
=15mA;
Bon
− 35 ns
rise time − 20 ns
turn-off time − 250 ns
storage time − 200 ns
fall time − 60 ns
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2000 Apr 11 3
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