Philips MBD127, BZA800AL User Manual

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD127

BZA800AL series

Quadruple ESD transient voltage
suppressor

Product specification 2002 Jan 11

Philips Semiconductors Product specification

Quadruple ESD transient voltage suppressor BZA800AL series

FEATURES

• ESD rating >8 kV contact discharge, according to
IEC1000-4-2

• SOT353 (SC-88A) surface mount package

• Common anode configuration.

APPLICATIONS

• Computers and peripherals

• Audio and video equipment

• Communication systems.

DESCRIPTION

Monolithictransientvoltagesuppressordiodeinafivelead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.

MARKING

TYPE NUMBER MARKING CODE

BZA856AL M1
BZA862AL M2
BZA868AL M3

PINNING

PIN DESCRIPTION

1 cathode 1
2 common anode
3 cathode 2
4 cathode 3
5 cathode 4

handbook, halfpage

5

1

4

1
3
4
5

2

3

Fig.1 Simplified outline (SOT353) and symbol.

2

MGT580

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

I

Z

I

F

I

FSM

P

tot

P

ZSM

working current T
continuous forward current T
non-repetitive peak forward current tp= 1 ms; square pulse − 4A
total power dissipation T
non repetitive peak reverse power

=25°C − note 1 mA

amb

=25°C − 200 mA

amb

=25°C; note 2; see Fig.5 − 300 mW

amb

square pulse; tp= 1 ms; see Fig.3

dissipation:

BZA856AL − 16 W
BZA862AL − 15 W
BZA868AL − 14 W

T

stg

T

j

storage temperature −65 +150 °C
junction temperature − 150 °C

Notes

1. DC working current limited by P

tot(max)

.

2. Device mounted on standard printed-circuit board.

2002 Jan 11 2

Philips Semiconductors Product specification

Quadruple ESD transient voltage suppressor BZA800AL series

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

R

th j-s

Note

1. Solder point of common anode (pin 2).

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

I

R

V

Z

r

dif

S

Z

C

d

I

ZSM

thermal resistance from junction to ambient all diodes loaded 410 K/W
thermal resistance from junction to solder point;

note 1

one diode loaded 200 K/W
all diodes loaded 185 K/W

forward voltage IF= 200 mA −−1.3 V
reverse current

BZA856AL V
BZA862AL V
BZA868AL V

=3V −−1000 nA

R

=4V −−500 nA

R

= 4.3 V −−100 nA

R

working voltage IZ=1mA

BZA856AL 5.32 5.6 5.88 V
BZA862AL 5.89 6.2 6.51 V
BZA868AL 6.46 6.8 7.14 V

differential resistance IZ=1mA

BZA856AL −−400 Ω
BZA862AL −−300 Ω
BZA868AL −−200 Ω

temperature coefficient IZ=1mA

BZA856AL − 0.3 − mV/K
BZA862AL − 1.6 − mV/K
BZA868AL − 2.2 − mV/K

diode capacitance f = 1 MHz; VR=0

BZA856AL −−125 pF
BZA862AL −−105 pF
BZA868AL −−90 pF

non-repetitive peak reverse current tp= 1 ms; T

amb

=25°C
BZA856AL −−2.2 A
BZA862AL −−2.1 A
BZA868AL −−2A

2002 Jan 11 3

Philips Semiconductors Product specification

Quadruple ESD transient voltage suppressor BZA800AL series

10

handbook, halfpage

I

ZSM

(A)

BZA856AL

−1

BZA862AL

1

BZA868AL

tp (ms)

1

−1

10

−2

10

10

Fig.2 Maximum non-repetitive peak reverse

current as a function of pulse time.

MLD790

BZA856AL

BZA868AL

tp (ms)

ZSM

MLD791

10

.

2

10

handbook, halfpage

P

ZSM
(W)

10

1

10

−2

10

P

ZSM=VZSM

V

ZSM

× I

is the non-repetitive peak reverse voltage at I

ZSM

10

.

−1

BZA862AL

1

Fig.3 Maximum non-repetitive peak reverse

power dissipation as a function of pulse
duration (square pulse).

BZA862AL

6

V

R

MLD792

(V)

120

handbook, halfpage

C

d

(pF)

80

40

0

02

Tj=25°C; f = 1 MHz.

BZA856AL

BZA868AL

48

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

400

handbook, halfpage

P

tot

(mW)

300

200

100

0

050

100 150

T

amb

Fig.5 Power derating curve.

MLD793

(°C)

2002 Jan 11 4