Philips MB2827BB Datasheet

Philips Semiconductors Advanced BiCMOS Products Product specification

MB2827

Dual 10-bit buffer/line driver;
non-inverting (3-State)

1

August 27, 1993 853-1667 10660

FEATURES

•Multiple V

CC

and GND pins minimize

switching noise

•Live insertion/extraction permitted

•3-State output buffers

•Power–up 3-State

•Output capability: +64mA/–32mA

•Latch-up protection exceeds 500mA per

Jedec JC40.2 Std 17

•ESD protection exceeds 2000 V per MIL

STD 883 Method 3015 and 200 V per
Machine Model

DESCRIPTION

The MB2827 high-performance BiCMOS
device combines low static and dynamic
power dissipation with high speed and high
output drive.

The MB2827 20-bit buffers provide high
performance bus interface buffering for wide
data/address paths or buses carrying parity.
They have NOR Output Enables (nOE

1,

nOE

2) for maximum control flexibility.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

T

amb

= 25°C; GND = 0V

TYPICAL UNIT

t

PLH

t

PHL

Propagation delay
nAx to nYx

CL = 50pF; VCC = 5V 3.0 ns

C

IN

Input capacitance VI = 0V or V

CC

4 pF

C

OUT

Output capacitance VO = 0V or VCC; 3-State 7 pF

I

CCZ

Total supply current Outputs disabled; VCC = 5.5V 80 µA

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE ORDER CODE DRAWING NUMBER

52-pin plastic Quad Flat Pack -40°C to +85°C MB2827BB 1418B

PIN CONFIGURATION LOGIC SYMBOL

1Y7

Vcc

1Y3

1Y2

1Y1

1Y0

1OE1

1OE0

1A0

1A1

GND

1A2

1A3

Vcc

Vcc

2Y6

2Y7

GND

2Y8

2Y9

2OE1

2OE0

2A9

2A8

2A7

2A6

Vcc

19 2220 231716 25 26241514 2118

1Y8

2Y1

1Y9

2Y2

GND

1Y6

2Y4
2Y5

2Y3

1Y5

2Y0

1Y4

1
2

3
4

5
6
7
8

9
10
11
12

13

47 4446 434950 41 40425152 4548

1A9

2A2

2A0

GND

1A7

1A6

2A4
2A5

2A3

1A5

2A1

1A8

1A439
38
37
36

35
34
33
32

31
30
29
28

27

MB2827

52-pin PQFP

45 44 42 41 39 38 37 36

1A0 1A1 1A2 1A3 1A4 1A5 1A6 1A7

1Y0 1Y1 1Y2 1Y3 1Y4 1Y5 1Y6 1Y7

48 49 50 51 1 2 3 5

46
47

1OE0
1OE1

35 34

1A8 1A9

1Y8 1Y9

6 7

33 32 31 29 28 27 25 24

2A0 2A1 2A2 2A3 2A4 2A5 2A6 2A7

2Y0 2Y1 2Y2 2Y3 2Y4 2Y5 2Y6 2Y7

8 9 10 11 12 13 15 16

21
20

2OE0
2OE1

23 22

2A8 2A9

2Y8 2Y9

18 19

Philips Semiconductors Advanced BiCMOS Products Product specification

MB2827

Dual 10-bit buffer/line driver;
non-inverting (3-State)

August 27, 1993

2

PIN DESCRIPTION

PIN NUMBER SYMBOL FUNCTION

45, 44, 42, 41, 39, 38, 37, 36, 35, 34,

33, 32, 31, 29, 28, 27, 25, 24, 23, 22

1A0 – 1A9
2A0 – 2A9

Data inputs

48, 49, 50, 51, 1, 2, 3, 5, 6, 7, 8, 9,

10, 11, 12, 13, 15, 16, 18, 19

1Y0 – 1Y9
2Y0 – 2Y9

Data outputs

46, 47
21, 20

1OE0, 1OE1
2OE

0, 2OE1

Output enable inputs (active–Low)

4, 17, 30, 43 GND Ground (0V)

14, 26, 40, 52 V

CC

Positive supply voltage

LOGIC SYMBOL (IEEE/IEC)

1

45 48
44 49
42 50
41 51
39 1
38 2
37 3
36 5

46

47

35 6
34 7

1

33 8
32 9
31 10
29 11
28 12
27 13
25 15
24 16

21

20

23 18
22 19

&

EN1

&

EN1

LOGIC DIAGRAM

nA0

nY0

nOE

0

nA1

nY1

nA2

nY2

nA3

nY3

nA4

nY4

nA5

nY5

nA6

nY6

nA7

nY7

nA8

nY8

nA9

nY9

nOE1

FUNCTION TABLE

INPUTS OUTPUTS

OPERATING

nOEx nAx nYx MODE

L L L Transparent
L H H Transparent

H X Z High impedance

H = High voltage level
L = Low voltage level
X = Don’t care
Z = High impedance “off” state

Philips Semiconductors Advanced BiCMOS Products Product specification

MB2827

Dual 10-bit buffer/line driver;
non-inverting (3-State)

August 27, 1993

3

ABSOLUTE MAXIMUM RATINGS

1, 2

SYMBOL

PARAMETER CONDITIONS RATING UNIT

V

CC

DC supply voltage –0.5 to +7.0 V

I

IK

DC input diode current VI < 0 –18 mA

V

I

DC input voltage

3

–1.2 to +7.0 V

I

OK

DC output diode current VO < 0 –50 mA

V

OUT

DC output voltage

3

output in Off or High state –0.5 to +5.5 V

I

OUT

DC output current output in Low state 128 mA

T

stg

Storage temperature range –65 to 150 °C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT

MIN MAX

V

CC

DC supply voltage 4.5 5.5 V

V

I

Input voltage 0 V

CC

V

V

IH

High-level input voltage 2.0 V

V

IL

Low-level Input voltage 0.8 V

I

OH

High-level output current –32 mA

I

OL

Low-level output current 64 mA

∆t/∆v Input transition rise or fall rate 0 5 ns/V

T

amb

Operating free-air temperature range –40 +85 °C