Philips mb2827 DATASHEETS

Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
1
August 27, 1993 853-1667 10660

FEATURES

CC
and GND pins minimize
switching noise
Live insertion/extraction permitted
3-State output buffers
Power–up 3-State
Output capability: +64mA/–32mA
Latch-up protection exceeds 500mA per
Jedec JC40.2 Std 17
ESD protection exceeds 2000 V per MIL
STD 883 Method 3015 and 200 V per Machine Model

DESCRIPTION

The MB2827 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
The MB2827 20-bit buffers provide high performance bus interface buffering for wide data/address paths or buses carrying parity. They have NOR Output Enables (nOE
1,
nOE
2) for maximum control flexibility.

QUICK REFERENCE DATA

SYMBOL PARAMETER
CONDITIONS
T
amb
= 25°C; GND = 0V
TYPICAL UNIT
t
PLH
t
PHL
Propagation delay nAx to nYx
CL = 50pF; VCC = 5V 3.0 ns
C
IN
Input capacitance VI = 0V or V
CC
4 pF
C
OUT
Output capacitance VO = 0V or VCC; 3-State 7 pF
I
CCZ
Total supply current Outputs disabled; VCC = 5.5V 80 µA

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE ORDER CODE DRAWING NUMBER
52-pin plastic Quad Flat Pack -40°C to +85°C MB2827BB 1418B

PIN CONFIGURATION LOGIC SYMBOL

1Y7
Vcc
1Y3
1Y2
1Y1
1Y0
1OE1
1OE0
1A0
1A1
GND
1A2
1A3
Vcc
Vcc
2Y6
2Y7
GND
2Y8
2Y9
2OE1
2OE0
2A9
2A8
2A7
2A6
Vcc
19 2220 231716 25 26241514 2118
1Y8
2Y1
1Y9
2Y2
GND
1Y6
2Y4 2Y5
2Y3
1Y5
2Y0
1Y4
1 2
3 4
5 6 7 8
9 10 11 12
13
47 4446 434950 41 40425152 4548
1A9
2A2
2A0
GND
1A7
1A6
2A4 2A5
2A3
1A5
2A1
1A8
1A439 38 37 36
35 34 33 32
31 30 29 28
27
MB2827
52-pin PQFP
45 44 42 41 39 38 37 36
1A0 1A1 1A2 1A3 1A4 1A5 1A6 1A7
1Y0 1Y1 1Y2 1Y3 1Y4 1Y5 1Y6 1Y7
48 49 50 51 1 2 3 5
46 47
1OE0 1OE1
35 34
1A8 1A9
1Y8 1Y9
6 7
33 32 31 29 28 27 25 24
2A0 2A1 2A2 2A3 2A4 2A5 2A6 2A7
2Y0 2Y1 2Y2 2Y3 2Y4 2Y5 2Y6 2Y7
8 9 10 11 12 13 15 16
21 20
2OE0 2OE1
23 22
2A8 2A9
2Y8 2Y9
18 19
Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
August 27, 1993
2

PIN DESCRIPTION

PIN NUMBER SYMBOL FUNCTION
45, 44, 42, 41, 39, 38, 37, 36, 35, 34,
33, 32, 31, 29, 28, 27, 25, 24, 23, 22
1A0 – 1A9 2A0 – 2A9
Data inputs
48, 49, 50, 51, 1, 2, 3, 5, 6, 7, 8, 9,
10, 11, 12, 13, 15, 16, 18, 19
1Y0 – 1Y9 2Y0 – 2Y9
Data outputs
46, 47 21, 20
1OE0, 1OE1 2OE
0, 2OE1
Output enable inputs (active–Low)
4, 17, 30, 43 GND Ground (0V)
14, 26, 40, 52 V
CC
Positive supply voltage

LOGIC SYMBOL (IEEE/IEC)

1
45 48 44 49 42 50 41 51 39 1 38 2 37 3 36 5
46
47
35 6 34 7
1
33 8 32 9 31 10 29 11 28 12 27 13 25 15 24 16
21
20
23 18 22 19
&
EN1
&
EN1

LOGIC DIAGRAM

nA0
nY0
nOE
0
nA1
nY1
nA2
nY2
nA3
nY3
nA4
nY4
nA5
nY5
nA6
nY6
nA7
nY7
nA8
nY8
nA9
nY9
nOE1

FUNCTION TABLE

INPUTS OUTPUTS
OPERATING
nOEx nAx nYx MODE
L L L Transparent L H H Transparent
H X Z High impedance
H = High voltage level L = Low voltage level X = Don’t care Z = High impedance “off” state
Philips Semiconductors Advanced BiCMOS Products Product specification
MB2827
Dual 10-bit buffer/line driver; non-inverting (3-State)
August 27, 1993
3

ABSOLUTE MAXIMUM RATINGS

1, 2
SYMBOL
PARAMETER CONDITIONS RATING UNIT
V
CC
DC supply voltage –0.5 to +7.0 V
I
IK
DC input diode current VI < 0 –18 mA
V
I
DC input voltage
3
–1.2 to +7.0 V
I
OK
DC output diode current VO < 0 –50 mA
V
OUT
DC output voltage
3
output in Off or High state –0.5 to +5.5 V
I
OUT
DC output current output in Low state 128 mA
T
stg
Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT
MIN MAX
V
CC
DC supply voltage 4.5 5.5 V
V
I
Input voltage 0 V
CC
V
V
IH
High-level input voltage 2.0 V
V
IL
Low-level Input voltage 0.8 V
I
OH
High-level output current –32 mA
I
OL
Low-level output current 64 mA
t/v Input transition rise or fall rate 0 5 ns/V
T
amb
Operating free-air temperature range –40 +85 °C
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