Philips mb2623 DATASHEETS

INTEGRATED CIRCUITS

MB2623

16-bit transceiver with dual enable,
non-inverting (3-State)

Product specification
Supersedes data of 1993 Aug 24
IC23 Data Handbook

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1998 Jan 16

Philips Semiconductors Product specification

È È

16-bit transceiver with dual enable, non-inverting
(3-State)

FEA TURES

•Two 8-bit bidirectional bus interfaces

•3-State buffers

•Power-up 3-State

•Multiple V

and GND pins minimize switching noise

CC

•Output capability: +64mA/–32mA

•Latch-up protection exceeds 500mA per Jedec Std 17

•ESD protection exceeds 2000 V per MIL STD 883 Method 3015

and 200 V per Machine Model

•Inputs are disabled during 3-State mode

QUICK REFERENCE DATA

SYMBOL PARAMETER

t

PLH

t

PHL

C
C
I

CCZ

IN

I/O

Propagation delay
nAx to nBx, or nBx to nAx

Input capacitance VI = 0V or V
I/O capacitance VO = 0V or VCC; 3-State 7 pF
Total supply current Outputs disabled; VCC =5.5V 50 µA

CL = 50pF; VCC = 5V

DESCRIPTION

The MB2623 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.

The MB2623 is a 16-bit transceiver featuring non-inverting 3-State
bus compatible outputs in both send and receive directions. The
MB2623 is designed for asynchronous two-way communication
between data buses.

The control function implementation allows for maximum flexibility in
timing. This device allows data transmission from the A bus to the B
bus or from the B bus to the A bus, depending upon the logic levels
at the Enable inputs (nOEBA
be used to disable the device so that the buses are effectively
isolated.

CONDITIONS

T

= 25°C; GND = 0V

amb

CC

MB2623

and nOEAB). The Enable inputs can

TYPICAL UNIT

3.2

3.1
4 pF

ns

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

52–pin plastic Quad Flat Pack –40°C to +85°C MB2623 BB MB2623 BB SOT379-1

LOGIC SYMBOL

1B3

1B2

GND

1B1

1B0

1OEAB

GND

1OEBA

1A0

1A1

GND

1A2

47 4446 434950 41 40425152 4548

1

V

CC

1B4

2

1B5

3

GND

4

1B6

5

1B7

GND

2B0
2B1

GND

2B2
2B3

V

CC

6
7
8

9

10

11
12
13

52-pin PQFP

19 2220 231716 25 262A51514 2118

1A3

39

V

CC

1A4

38

1A5

37

GND

36

1A6

35

1A7

34

GND

33

2A0

32
31

2A1

30

GND

29

2A2

28

2A3

27

V

CC

PIN DESCRIPTION

PIN NUMBER SYMBOL FUNCTION

44, 43, 41, 40,
38, 37, 35, 34,
32, 31, 29, 28,

26, 25, 23, 22

48, 49, 51, 52,

2, 3, 5, 6,

8, 9, 11, 12,

14, 15, 17, 18

47, 19 1OEAB, 2OEAB

45, 21 1OEBA, 2OEBA

4, 7, 10, 16,

20, 24, 30, 33,

36, 42, 46, 50

1, 13, 27, 39 V

1A0 – 1A7
2A0 – 2A7

1B0 – 1B7
2B0 – 2B7

Data inputs/outputs (A
side)

Data inputs/outputs (B
side)

Output enable inputs
(active-High)

Output enable inputs
(active-Low)

GND Ground (0V)

CC

Positive supply voltage

2B4

2B5

2B6

2B7

GND

2OEBA

1998 Jan 16 853–1575 18869

GND

2OEBA

2A7

2A6

GND

2A5

2A4

SB00104

2

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting
(3-State)

FUNCTION TABLE

INPUTS OUTPUTS

nOEBA nOEAB nAx nBx

L L A = B Inputs
H H Inputs B = A
H L Z Z

L H A = B B = A

H = High voltage level
L = Low voltage level
Z = High impedance “off” state

PIN CONFIGURATION

1OEAB

1A0

1A1

1A2

1A3

1A4

1A5

1A6

1A7

MB2623

47

44

43

41

40

38

37

35

34

45

48

49

51

52

2

3

5

6

1OEBA

1B0

1B1

1B2

1B3

1B4

1B5

1B6

1B7

2OEAB

2A0

2A1

2A2

2A3

2A4

2A5

2A6

2A7

19

32

31

29

28

26

25

23

22

21

8

9

11

12

14

15

17

18

2OEBA

2B0

2B1

2B2

2B3

2B4

2B5

2B6

2B7

LOGIC SYMBOL (IEEE/IEC)

47

45

44

43

41

10

38

37

35

EN1

EN2

SB00105

19

21

1

2

48

32

49

31

51

29

52

28

2

26

3

25

5

23

6

2234

EN1

EN2

1

2

8

9

11

12

14

15

17

18

SB00106

1998 Jan 16

3

Philips Semiconductors Product specification

16-bit transceiver with dual enable, non-inverting

CC

MB2623

V

(3-State)

ABSOLUTE MAXIMUM RATINGS

SYMBOL

V

V

I

CC

I

IK

V

I

OK

OUT

OUT

T

stg

DC supply voltage –0.5 to +7.0 V
DC input diode current VI < 0 –18 mA
DC input voltage

I

DC output diode current VO < 0 –50 mA
DC output voltage
DC output current output in Low state 128 mA
Storage temperature range –65 to 150 °C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

PARAMETER CONDITIONS RATING UNIT

3

3

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT

V

CC

V

V

V

I

OH

I

OL

∆t/∆v Input transition rise or fall rate 0 10 ns/V

T

amb

DC supply voltage 4.5 5.5 V
Input voltage 0 V

I

High-level input voltage 2.0 V

IH

Low-level Input voltage 0.8 V

IL

High-level output current –32 mA
Low-level output current 64 mA

operating free-air temperature range –40 +85 °C

1, 2

–1.2 to +7.0 V

output in Off or High state –0.5 to +5.5 V

Min Max

1998 Jan 16

4