Philips mb2374 DATASHEETS

ADVANCED BiCMOS PRODUCTS

MB2374

Dual octal D-type flip-flop; positive-edge trigger (3-State)

Product specification August 23, 1993 IC23

Philips Semiconductors

Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

FEA TURES

•Two 8-bit positive edge triggered registers

•Live insertion/extraction permitted

•Power-up 3-State

•Power-up reset

•Multiple V

and GND pins minimize switching noise

•3-State output buffers

•Output capability: +64mA/–32mA

•Latch-up protection exceeds 500mA per Jedec Std 17

•ESD protection exceeds 2000V per MIL STD 883 Method 3015

and 200V per Machine Model

QUICK REFERENCE DATA

SYMBOL PARAMETER

PLH

PHL

OUT

CCZ

Propagation delay nCP to nQx

Input capacitance VI = 0V or V Output capacitance VO = 0V or VCC; 3-State 7 pF Total supply current Outputs disabled; VCC = 5.5V 120 µA

DESCRIPTION

The MB2374 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The MB2374 has two 8-bit, edge triggered registers, with each register coupled to eight 3-State output buffers. The two sections of each register are controlled independently by the clock (nCP) and Output Enable (nOE

Each register is fully edge triggered. The state of each D input, one set-up time before the Low-to-High clock transition, is transferred to the corresponding flip-flop’s Q output.

The 3-State output buffers are designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors. Each active-Low Output Enable (nOE its register independent of the clock operation.

When nOE register. When nOE High-impedance “OFF” state, which means they will neither drive nor load the bus.

CONDITIONS

= 25°C; GND = 0V

amb

CL = 50pF; VCC = 5V

) control gates.

) controls all eight 3-State buffers for

is Low, the stored data appears at the outputs for that

is High, the outputs for that register are in the

TYPICAL UNIT

3.4

3.6

4 pF

ORDERING INFORMATION

PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER

52–pin plastic Quad Flat Pack –40°C to +85°C MB2374 BB MB2374 BB SOT379-1

PIN CONFIGURATION

1Q3

1Q2

GND

1Q1

1Q4

1Q5

3 4

GND

1Q6

1Q7

GND

2Q0

2Q1

GND

2Q2

2Q3

2Q4

2Q5

2Q6

GND

1Q0

1OE

GND

47 4446 434950 41 404251 4548

52-pin PQFP

19 2220 231716 25 26241514 2118

2Q7

2OE

GND

1CP

2CP

1D0

2D7

1D1

2D6

GND

1D2

2D5

1D3

39 38 37 36 35 34 33 32

31 30 29 28

2D4

1D4 1D5 GND 1D6 1D7 GND 2D0

2D1 GND 2D2 2D3

SB00062

PIN DESCRIPTION

PIN NUMBER SYMBOL FUNCTION

44, 43, 41, 40, 38, 37, 35, 34, 32, 31, 29, 28,

26, 25, 23, 22

48, 49, 51, 52,

2, 3, 5, 6,

8, 9, 11, 12,

14, 15, 17, 18

47, 19 1OE, 2OE

45, 21 1CP, 2CP

4, 7, 10, 16, 20, 24,

30, 33, 36, 42, 46, 50

1, 13, 27, 39 V

1D0 – 1D7 2D0 – 2D7

1Q0 – 1Q7 2Q0 – 2Q7

Data inputs

Data outputs

Output enable inputs (active-Low)

Clock pulse inputs (active rising edge)

GND Ground (0V)

Positive supply voltage

1993 Aug 23 853–1625 10583

Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

LOGIC SYMBOL

45 47

21 19

1D0 1D1 1D2 1D3

1CP 1OE

1Q0 1Q1 1Q2

2D0 2D1 2D2 2D3

2CP 2OE

2Q0 2Q1 2Q2

LOGIC DIAGRAM

nD0

44 43 41 40

1Q3

4948

32 31 29 28

2Q3

38 37 35 34

1D4 1D5 1D6 1D7

1Q4 1Q5 1Q6651Q7

5251

1211

26 25 23 22

2D4 2D5 2D6 2D7

2Q4 2Q5 2Q6

1514

nD1

2Q7

1817

SB00063

nD2

nD3

LOGIC SYMBOL (IEEE/IEC)

nD4

nD5

nD6

nD7

SB00064

nCP

nOE

CP Q

nQ0

CP Q

nQ1 nQ2 nQ3 nQ4 nQ5 nQ6 nQ7

CP Q

SB00065

1993 Aug 23

Philips Semiconductors Product specification

MB237416-bit D-type flip-flop; positive-edge trigger (3-State)

FUNCTION TABLE

INPUTS INTERNAL OUTPUTS OPERATING MODE

nOE nCP nDx REGISTER nQ0 – nQ7

L L

L ↑ X NC NC Hold

H H

H = High voltage level h = High voltage level one set-up time prior to the High-to-Low E transition L = Low voltage level l = Low voltage level one set-up time prior to the High-to-Low E transition NC= No change X = Don’t care Z = High impedance “off” state ↑ = Low-to-High clock transition

= Not a Low-to-High clock transition

↑

↑ ↑

nDx

Z Z

Load and read register

Disable outputs

ABSOLUTE MAXIMUM RATINGS

SYMBOL

OUT

stg

DC supply voltage –0.5 to +7.0 V DC input diode current VI < 0 –18 mA DC input voltage DC output diode current VO < 0 –50 mA DC output voltage DC output current output in Low state 128 mA Storage temperature range –65 to 150 °C

PARAMETER CONDITIONS RATING UNIT

1, 2

–1.2 to +7.0 V

output in Off or High state –0.5 to +5.5 V

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability .

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS UNIT

MIN MAX

V V V I

∆t/∆v Input transition rise or fall rate 0 10 ns/V

amb

DC supply voltage 4.5 5.5 V Input voltage 0 V

High-level input voltage 2.0 V

Low-level Input voltage 0.8 V

High-level output current –32 mA Low-level output current 64 mA

Operating free-air temperature range –40 +85 °C

1993 Aug 23

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