Philips LLE18300X Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
M3D159
LLE18300X
NPN microwave power transistor
Product specification Supersedes data of September 1994
1999 Apr 22
Philips Semiconductors Product specification
NPN microwave power transistor LLE18300X

FEATURES

Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
Interdigitated structure provides high emitter efficiency
Gold metallization realizes very good stability of the characteristics and excellent lifetime
Multicell geometry gives good balance of dissipated power and low thermal resistance
Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

APPLICATION

Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between
1.7 GHz and 2 GHz.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in an SOT437A glued cap metal ceramic flange package, with emitter connected to flange.

QUICK REFERENCE DATA

Microwave performance up to T
=25°C in a common emitter class AB
mb
amplifier.
MODE OF
OPERATIONf(GHz)
V
(V)
CE
I
CQ
(A)
P
L1
(W)
G
po
(dB)
η
(%)
C
Zi; Z
()
Class AB (CW) 1.85 24 0.1 27 7.8 typ. 40 see Figs
8 and 9

PINNING - SOT437A

PIN DESCRIPTION
1 collector 2 base 3 emitter connected to flange
handbook, 4 columns
Top view
1
c
b
3
2
e
MAM112
Fig.1 Simplified outline and symbol.
L
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
Philips Semiconductors Product specification
NPN microwave power transistor LLE18300X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
i
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter 45 V collector-emitter voltage RBE= 220 Ω−30 V collector-emitter voltage open base 15 V emitter-base voltage open collector 3V collector current (DC) 6A input power f = 1.85 GHz; VCE= 24 V; class AB 8W total power dissipation Tmb=75°C 50 W storage temperature 65 +150 °C junction temperature 200 °C soldering temperature t 10 s; 1 235 °C
10
I
C
(A)
101
ΙΙΙ
V (V)
CE
1
1
10
Tmb≤ 75 °C. (I) Region of permissible DC operation. (II) Permissible extension provided RBE≤ 220 Ω.
Fig.2 DC SOAR.
MBD734
150
T ( C)
mb
MEA577
o
60
P
tot
(W)
40
20
2
10
0
0 50 100 200
Fig.3 Power derating curve.
Philips Semiconductors Product specification
NPN microwave power transistor LLE18300X

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h

CHARACTERISTICS

=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
thermal resistance from junction to mounting base Tj= 100 °C 2 K/W thermal resistance from mounting base to heatsink 0.2 K/W
collector cut-off current IE= 0; VCB=20V 3mA collector-emitter breakdown voltage IC= 15 mA; RBE= 220 30 V collector-base breakdown voltage IC=15mA 45 V emitter-base breakdown voltage IE=15mA 3 V DC current gain IC= 1 A; VCE= 3 V 15 100

APPLICATION INFORMATION

Microwave performance up to T
MODE OF
OPERATION
f
(GHz)
=25°C in a common emitter class AB amplifier.
mb
V
(V)
CE
I
CQ
(A)
Class AB (CW) 1.85 24 0.1 27
P (W)
typ. 30
L1
G
(dB)
7.8 typ. 8.6
po
η
(%)
C
Zi; Z
()
L
typ. 40 see Figs 8
and 9
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