Philips LLE18150X Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LLE18150X
NPN silicon planar epitaxial
microwave power transistor
Product specification
File under Discrete Semiconductors, SC15
Philips Semiconductors
September 1994
Philips Semiconductors Product specification
NPN silicon planar epitaxial
microwave power transistor
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.7 GHz and 2.0 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
FO-229 glued cap metal ceramic
flange package, with emitter
connected to flange.
LLE18150X
QUICK REFERENCE DATA
Microwave performance up to T
amplifier.
MODE OF
OPERATIONf(GHz)
V
(V)
Class AB (CW) 1.85 24 0.05 ≥12 ≥7.8 typ. 43 see Figs 6
PINNING - FO-229
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
handbook, 4 columns
Top view
Fig.1 Simplified outline and symbol.
=25°C in a common emitter class AB
mb
CE
I
(A)
1
2
CQ
3
P
L1
(W)
G
po
(dB)
b
MAM112
c
e
η
(%)
C
Zi; Z
(Ω)
and 7
L
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1994 2
Philips Semiconductors Product specification
NPN silicon planar epitaxial
LLE18150X
microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
i
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 45 V
collector-emitter voltage RBE = 220 Ω−30 V
collector-emitter voltage open base − 22 V
emitter-base voltage open collector − 3V
DC collector current − 3A
input power f = 1.85 GHz; VCE= 24 V; class AB − 4W
total power dissipation Tmb=75°C − 25 W
storage temperature −65 +150 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
30
P
tot
(W)
20
10
0
0 50 100 200
Fig.2 Power derating curve.
150
T ( C)
mb
MBD741
o
September 1994 3
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