Philips LLE18150X Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

LLE18150X

NPN silicon planar epitaxial
microwave power transistor

Product specification
File under Discrete Semiconductors, SC15

Philips Semiconductors

September 1994

Philips Semiconductors Product specification

NPN silicon planar epitaxial
microwave power transistor

FEATURES

• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR

• Interdigitated structure provides
high emitter efficiency

• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime

• Multicell geometry gives good
balance of dissipated power and
low thermal resistance

• Internal input and output
prematching ensures good stability
and allows an easier design of
wideband circuits.

APPLICATION

Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between

1.7 GHz and 2.0 GHz.

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
FO-229 glued cap metal ceramic
flange package, with emitter
connected to flange.

LLE18150X

QUICK REFERENCE DATA

Microwave performance up to T
amplifier.

MODE OF

OPERATIONf(GHz)

V

(V)

Class AB (CW) 1.85 24 0.05 ≥12 ≥7.8 typ. 43 see Figs 6

PINNING - FO-229

PIN DESCRIPTION

1 collector
2 base
3 emitter connected to flange

handbook, 4 columns

Top view

Fig.1 Simplified outline and symbol.

=25°C in a common emitter class AB

mb

CE

I
(A)

1

2

CQ

3

P

L1

(W)

G

po

(dB)

b

MAM112

c

e

η

(%)

C

Zi; Z

(Ω)

and 7

L

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

September 1994 2

Philips Semiconductors Product specification

NPN silicon planar epitaxial

LLE18150X

microwave power transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

CEO

V

EBO

I

C

P

i

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 45 V
collector-emitter voltage RBE = 220 Ω−30 V
collector-emitter voltage open base − 22 V
emitter-base voltage open collector − 3V
DC collector current − 3A
input power f = 1.85 GHz; VCE= 24 V; class AB − 4W
total power dissipation Tmb=75°C − 25 W
storage temperature −65 +150 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

30

P

tot

(W)

20

10

0

0 50 100 200

Fig.2 Power derating curve.

150

T ( C)

mb

MBD741

o

September 1994 3