Philips LLE18010X Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D159
LLE18010X
NPN microwave power transistor
Product specification
Supersedes data of December 1994
1999 Apr 22
Philips Semiconductors Product specification
NPN microwave power transistor LLE18010X
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
APPLICATION
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications up to
2 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
connected to flange.
QUICK REFERENCE DATA
Microwave performance up to T
=25°C in a common emitter class AB
mb
amplifier.
MODE OF
OPERATIONf(GHz)
V
(V)
CE
I
CQ
(mA)
P
L1
(W)
G
po
(dB)
Zi; Z
(Ω)
Class AB (CW) 1.85 24 10 ≥1 ≥8.5 see Figs
6 and 7
PINNING - SOT437A
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
handbook, 4 columns
Top view
1
c
b
3
2
e
MAM112
Fig.1 Simplified outline and symbol.
L
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1999 Apr 22 2
Philips Semiconductors Product specification
NPN microwave power transistor LLE18010X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 40 V
collector-emitter voltage RBE= 220 Ω−30 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 250 mA
total power dissipation Tmb=75°C − 4.5 W
storage temperature −65 +150 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
handbook, halfpage
6
P
tot
(W)
4
2
0
50 0 50 150
100
T ( C)
Fig.2 Power derating curve.
mb
MLC290
o
1999 Apr 22 3
Philips Semiconductors Product specification
NPN microwave power transistor LLE18010X
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
CHARACTERISTICS
= 25 °C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
thermal resistance from junction to mounting base Tj= 100 °C 22 K/W
thermal resistance from mounting base to heatsink 0.2 K/W
collector cut-off current IE= 0; VCB=20V − 11 µA
collector-emitter breakdown voltage IC= 1 mA; RBE= 220 Ω 30 − V
collector-base breakdown voltage IC= 1 mA 40 − V
emitter-base breakdown voltage IE= 0.5 mA 3 − V
DC current gain IC= 125 mA; VCE= 5 V 15 150
APPLICATION INFORMATION
Microwave performance up to T
MODE OF
OPERATION
Class AB
f
(GHz)
1.85 24 10 ≥1
(CW)
1.65 24 10 typ. 2 typ. 11 typ. 47 see Figs 6 and 7
=25°C in a common emitter class AB amplifier.
mb
V
(V)
CE
I
CQ
(mA)
P
L1
(W)
typ. 1.5
G
po
(dB)
≥8.5
typ. 10
η
(%)
C
Zi; Z
(Ω)
L
typ. 40 see Figs 6 and 7
1999 Apr 22 4
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