Philips LLE16120X Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LLE16120X
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor LLE16120X
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input prematching ensures
good stability and allows an easier
design of wideband circuits.
APPLICATIONS
Intended for use in common emitter,
class AB power amplifiers in CW
conditions for professional
applications at 1.65 GHz.
DESCRIPTION
QUICK REFERENCE DATA
Microwave performance up to T
=25°C in a common emitter class AB
mb
amplifier.
MODE OF
OPERATIONf(GHz)
V
(V)
CE
I
CQ
(A)
P
L1
(W)
G
po
(dB)
Zi; Z
(Ω)
L
Class AB (CW) 1.65 24 0.1 ≥11 ≥8.7 see Figs 8 and 9
PINNING - SOT437A
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
handbook, 4 columns
Top view
1
c
b
3
2
e
MAM112
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with emitter
Fig.1 Simplified outline and symbol.
connected to flange.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18 2
Philips Semiconductors Product specification
NPN microwave power transistor LLE16120X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 45 V
collector-emitter voltage RBE= 220 Ω−30 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 2A
total power dissipation Tmb=75°C − 23 W
storage temperature −65 +150 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note1 − 235 °C
10
handbook, halfpage
I
C
(A)
1
−1
10
−2
10
110
Tmb≤ 75 °C.
(I) Region of permissible DC operation.
Fig.2 DC SOAR.
(1)
VCE (V)
MRA545
30
handbook, halfpage
P
tot
(W)
25
20
15
10
5
0
2
10
0 50 100 150 200
P
=23W.
tot max
MRA544
Tmb (
250
o
C)
Fig.3 Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 18 3
Philips Semiconductors Product specification
NPN microwave power transistor LLE16120X
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See “
Mounting recommendations in the General part of handbook SC19a”
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
V
(BR)CER
V
(BR)CBO
V
(BR)EBO
h
FE
thermal resistance from junction to mounting base Tj= 100 °C 4.2 K/W
thermal resistance from mounting base to heatsink note1 0.2 K/W
.
collector cut-off current VCB= 20 V; IE=0 − 1mA
collector-emitter breakdown voltage IC= 5 mA; RBE= 220 Ω 30 − V
collector-base breakdown voltage IC= 5 mA; IB=0 45 − V
emitter-base breakdown voltage IE= 5 mA; IC=0 3 − V
DC current gain VCE= 3 V; IC= 1 A 15 100
APPLICATION INFORMATION
Microwave performance up to T
MODE OF
OPERATION
f
(GHz)
Class AB (CW) 1.65 24 0.1 ≥11;
=25°C in a common emitter class AB amplifier (note 1).
mb
V
(V)
CE
I
CQ
(A)
P
L1
(W)
G
po
(dB)
≥8.7;
typ. 13
typ. 10.8
Note
1. The test circuit is split into 2 independant halves each being 30 × 40 mm in size.
η
(%)
C
Zi; Z
(Ω)
L
typ. 45 see Figs 8 and 9
1997 Feb 18 4
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