Philips kmz52 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D396
KMZ52
Magnetic Field Sensor
Product specification 2000 Jun 09
Philips Semiconductors Product specification
Magnetic Field Sensor KMZ52
FEATURES
• High sensitivity
• Integrated compensation coil
• Integrated set/reset coil.
APPLICATIONS
• Navigation
• Current and earth magnetic field measurement
• Traffic detection.
DESCRIPTION
The KMZ52 is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two magnetoresistive
Wheatstone bridges physicallyoffset from one another by
90° and integrated compensation and set/reset coils. The
integrated compensation coils allow magnetic field
measurement with current feedback loops to generate
outputs that are independent of drift in sensitivity. The
orientationofsensitivitymaybesetorchanged(flipped)by
means of the integrated set/reset coils. A short current
pulse should be applied to the compensation coils to
recover(set)thesensorafterexposuretostrongdisturbing
magnetic fields. A negative current pulse will reset the
sensor to reversed sensitivity. By use of periodically
alternated flipping pulses and a lock-in amplifier, the
output is made independent of sensor and amplifier offset.
PINNING
SYMBOL PIN DESCRIPTION
+I
V
flip2
CC2
1 flip coil
2 bridge supply voltage
GND2 3 ground
+I
comp2
4 compensation coil
GND1 5 ground
+I
comp1
−I
comp1
−V
O1
+V
O1
−I
flip1
+I
flip1
V
CC1
−I
comp2
−V
O2
+V
O2
−I
flip2
16
handbook, halfpage
6 compensation coil
7 compensation coil
8 bridge output voltage
9 bridge output voltage
10 flip coil
11 flip coil
12 bridge supply voltage
13 compensation coil
14 bridge output voltage
15 bridge output voltage
16 flip coil
9
2000 Jun 09 2
pin 1 index
1
Fig.1 Simplified outline SOT109-1.
8
MBL201
Philips Semiconductors Product specification
Magnetic Field Sensor KMZ52
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
CC
S sensitivity (uncompensated) 12 16 −
V
offset
R
bridge
R
comp
A
comp
R
flip
I
flip
t
flip
Notes
1. The compensation coil generates a field H
become zero if H
2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not
exceed the specified limit, see Chapter “Limiting values”.
bridge supply voltage − 58V
mV/V
-------------kA/m
offset voltage per supply voltage −1.5 0 +1.5 mV/V
bridge resistance 123kΩ
compensation coil resistance 100 170 300 Ω
field factor of compensation coil; note 1 19 22 25
A/m
---------mA
resistance of set/reset coil 1 2 3 Ω
recommended flipping current for stable operation; note 2 ±800 ±1000 ±1200 mA
flip pulse duration; note 2 1 3 100 µs
× I
ext=Hcomp
comp=Acomp
in addition to the external field H
comp
.
. Sensor output will
ext
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
CC
P
tot
T
stg
T
amb
I
comp
I
flip (max)
P
flip (max)
V
isol
bridge supply voltage − 8V
total power dissipation − 130 mW
storage temperature −65 +150 °C
maximum operating temperature −40 −125 °C
maximum compensation current − 15 mA
maximum flipping current − 1500 mA
maximum flipping power dissipation − 50 mW
voltage between isolated systems:
− 60 V
flip coil and Wheatstone bridge;
compensation coil and Wheatsone bridge;
flip coil and compensation coil
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
terminal resistance from junction to ambient 105 K/W
2000 Jun 09 3
Philips Semiconductors Product specification
Magnetic Field Sensor KMZ52
CHARACTERISTICS
T
=25°C; V
bridge
CC1=VCC2
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC
bridge supply voltage note 1 − 58V
H field strength operating range in sensor
plane
S sensitivity open circuit 12 16 −
TCS temperature coefficient of sensitivity T
k
SX
TCV
R
bridge
TCR
O
bridge
sensitivity synchronism note 2 92 100 108 %
temperature coefficient of output voltage VCC=5V;
bridge resistance note 3 123kΩ
temperature coefficient of bridge
resistance
V
offset
TCV
offset
offset voltage per supply voltage −1.5 0 +1.5 mV/V
temperature coefficient of offset voltage T
FH hysteresis of output voltage −−2 %FS
R
comp
A
comp
R
flip
TCR
flip
resistance of compensation coil note 6 100 170 300 Ω
field factor of compensation coil 19 22 25
resistance of set/reset coil note 7 1 2 3 Ω
temperature coefficient of resistance of
set/reset coil
I
flip
recommended flipping current for stable
operation
t
flip
R
isol
V
isol
R
isol_dice
flip pulse duration 1 3 100 µs
isolating resistance note 8 1 −−MΩ
voltage between isolated systems note 8 −−50 V
isolating resistance between dice die 1 to die 2 1 −−MΩ
f operating frequency 0 − 1 MHz
α angle die-to-die note 9 88 90 92 deg
β angle dice-to-package note 9 −5 0 +5 deg
= 5 V; unless otherwise specified.
= −25 to +125 °C − 0.31 − %/K
s
T
bridge
T
bridge
note 4
bridge
note 5
T
flip
−0.2 − +0.2 kA/m
mV/V
-------------kA/m
−−0.4 − %/K
= −25 to +125 °C
= −25 to +125 °C;
= −25 to +125 °C;
− 0.3 − %/K
−30 +3
µ V/V
-------------
K
A/m
---------mA
= −25 to +125 °C − 0.39 − %/K
±800 ±1000 ±1200 mA
Notes
1. Due to the ratiometric output, the same supply voltage (V
2.
k
SX
100
A
-----------------------------A
×
comp1S1
×
comp2S2
%×=
) must be applied to both dice in one KMZ52 device.
CC
3. Bridge resistance die 1: between pins 5 and 12; bridge resistance die 2: between pins 2 and 3.
R
4. .
TCR
bridge
bridge T2()Rbridge T1()
100=
-------------------------------------------------------------- -
R
bridge T1()T2T1
–
–()
Where T
25°CT2125°C=;–=
1
2000 Jun 09 4
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