Philips KMZ52 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D315
KMZ50
Magnetic field sensor
Preliminary specification
Supersedes data of 1996 Nov 15
File under Discrete Semiconductors, SC17
1998 Mar 24
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ50
FEATURES
• High sensitivity
• Integrated set/reset coil.
APPLICATIONS
• Navigation
• Current and earth magnetic field measurement
• Traffic detection.
DESCRIPTION
The KMZ50 is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. The sensor contains one magnetoresistive
Wheatstone bridge and integrated set/reset conductors.
With the integrated set/reset conductor the orientation of
sensitivity may be set or changed (flipped). A short current
pulse on this conductor is needed to recover (set) the
sensor after exposure to strong disturbing magnetic fields.
A negative current pulse will reset the sensor to reversed
sensitivity. By use of periodically alternated flipping pulses
and a lock-in amplifier, output will become independent of
sensor and amplifier offset.
PINNING
PIN SYMBOL DESCRIPTION
1 +I
2V
flip
CC
flip coil
bridge supply voltage
3 GND ground
4 n.c. not connected
5 n.c. not connected
6 −V
7+V
8 −I
handbook, halfpage
pin 1
index
O
O
flip
bridge output voltage
bridge output voltage
flip coil
H
58
41
MGD791
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
CC
S sensitivity (uncompensated) 12 16 −
V
offset
R
bridge
R
flip
I
flip (min)
t
flip (min)
bridge supply voltage − 58V
mV V⁄
----------------kA m⁄
offset voltage −1.5 − +1.5 mV/V
bridge resistance 1 − 3kΩ
flip coil resistance 1 3 5 Ω
minimum recommended flipping current; note 1 800 1000 1200 mA
minimum flip pulse duration; note 1 1 3 100 µs
Note
1. Average power consumption in flip conductor, defined by current, pulse duration and pulse repetition rate may not
exceed the specified limit, see “Limiting values”.
1998 Mar 24 2
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ50
CIRCUIT DIAGRAM
handbook, halfpage
−I
F
8765
Z
1
1234
+I
F
+V
V
CC
O
−V
GND
O
n.c.
MGD792
n.c.
Fig.2 Simplified circuit diagram.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
CC
P
tot
T
stg
T
bridge
I
flip (max)
P
flip (max)
V
isol
bridge supply voltage − 9V
total power dissipation − 130 mW
storage temperature −65 +150 °C
bridge operating temperature −40 +125 °C
maximum flipping current − 1500 mA
maximum flipping power dissipation − 50 mW
voltage between isolated systems:
− 60 V
flip conductor - Wheatstone bridge
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient 155 K/W
1998 Mar 24 3
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