Philips KMZ41 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D315M3D315
KMZ41
Magnetic field sensor
Preliminary specification
Supersedes data of 1998 Mar 26
2000 Apr 18
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ41
DESCRIPTION
The KMZ41 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two galvanic separated
Wheatstone bridges. Its properties enable this sensor to
be used in angle measurement applications under strong
field conditions. A rotating magnetic field
strength > 40 kA/m (recommended field
strength > 100 kA/m) in the x-y plane will deliver a
sinusoidal output signal. The sensor can be operated at
any frequency between DC and 1 MHz.
PINNING
PIN SYMBOL DESCRIPTION
1 −V
2 −V
3V
4V
5+V
6+V
O1
O2
CC2
CC1
O1
O2
output voltage bridge 1
output voltage bridge 2
supply voltage bridge 2
supply voltage bridge 1
output voltage bridge 1
output voltage bridge 2
7 GND2 ground 2
8 GND1 ground 1
handbook, halfpage
pin 1
index
Fig.1 Simplified outline SOT96-1.
58
x
y
41
MGD790
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
CC1
V
CC2
S sensitivity (α
R
bridge
V
offset1
V
offset2
bridge supply voltage − 59V
bridge supply voltage − 59V
=45°; α2=0°) 2.44 2.72 3.00 mV/°
1
bridge resistance 2 2.5 3 kΩ
offset voltage −2 − +2 mV/V
offset voltage −2 − +2 mV/V
2000 Apr 18 2
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ41
CIRCUIT DIAGRAM
handbook, halfpage
GND1
−V
O1
GND2
8765
1234
−V
O2
+V
V
O2
CC2
+V
V
O1
MGD789
CC1
Fig.2 Simplified circuit diagram.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
P
tot
T
stg
T
bridge
bridge supply voltage − 9V
total power dissipation − 90 mW
storage temperature −65 +150 °C
bridge operating temperature −40 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient 155 K/W
2000 Apr 18 3
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ41
CHARACTERISTICS
T
=25°C; H
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CC1
V
CC2
bridge supply voltage − 59V
bridge supply voltage − 59V
S sensitivity open circuit, note 1;
V
peak 1
V
peak 2
TCV
peak voltage note 2; see Fig.4 70 78 86 mV
peak voltage note 2; see Fig.4 70 78 86 mV
temperature coefficient of
peak
peak voltage
R
bridge
TCR
bridge resistance note 4 2 2.5 3 kΩ
temperature coefficient of
bridge
bridge resistance
V
offset
TCV
offset voltage see Fig.4 −2 − +2 mV/V
temperature coefficient of
offset
offset voltage
∆V
offset
maximum change of offset
voltage within temperature
range
FH hysteresis of output voltage note 8 0 0.01 0.04 %FS
ω amplitude angular velocity note 9 0 25000 t.b.f °/s
k amplitude synchronism note 10 99.5 100 100.5 %
TCk temperature coefficient of
amplitude synchronism
∆α angular inaccuracy note 12 0 0.1 0.25 deg
rotation
= 100 kA/m; V
=5V; V
CC1
α =0° (bridge 2);
α =45° (bridge 1)
T
amb
note 3
T
bridge
note 5
T
bridge
note 6; see Fig.4
T
amb
note 7; see Fig.3
T
amb
note 7; see Fig.3
T
amb
note 11
= 5 V unless otherwise specified.
CC2
2.44 2.72 3.00 mV/°
= −40 to +150 °C;
= −40 to +150 °C
= −40 to +150 °C
= −40 to +100 °C;
= −40 to +150 °C;
= −40 to +150 °C
−0.25 −0.31 −0.37 %/K
0.3 0.32 0.34 %/K
−2 −+2
−0.2 0 +0.14 mV/V
−0.28 0 +0.22 mV/V
−0.002 0 0.002 %/K
µVV⁄
--------------K
Notes
1. Sensitivity changes with angle due to sinusoidal output.
2. V
3. .
peak
TCV
= (V
peak
− V
out max
100=
offset
V
peak T2()Vpeak T1()
------------------------------------------------------V
peak T1()T2T1
).
–
–()
Where T
40°CT2150°C=;–=
1
4. Bridge resistance between pins 8 and 4, pins 7 and 3, pins 5 and 1, pins 6 and 2.
R
5. .
TCR
bridge
6. .
TCV
7. ∆V
offset
offset
=(V
=
offset
bridge T2()Rbridge T1()
100=
-------------------------------------------------------------- -
R
bridge T1()T2T1
V
offset T2()Voffset T1()
--------------------------------------------------------T
(T) − V
–
–
–()
2T1
(T = 25 °C).
offset
–()
Where T
Where T
1
40°CT2150°C=;–=
1
40°CT2150°C=;–=
2000 Apr 18 4
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