Philips KMZ41 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D315
KMZ41
Magnetic field sensor
Product specification
Supersedes data of 1996 Dec 11
File under Discrete Semiconductors, SC17
1998 Mar 26
Philips Semiconductors Product specification
Magnetic field sensor KMZ41
DESCRIPTION
The KMZ41 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. The sensor contains two galvanic separated
Wheatstone bridges. Its properties enable this sensor to
be used in angle measurement applications under strong
field conditions. A rotating magnetic field
(strength > 100 kA/m) in the x-y plane will deliver a
sinusoidal output signal. The sensor can be operated at
any frequency between DC and 1 MHz.
PINNING
PIN SYMBOL DESCRIPTION
1 −V
2 −V
3V
4V
5+V
6+V
O1
O2
CC2
CC1
O1
O2
output voltage bridge 1
output voltage bridge 2
supply voltage bridge 2
supply voltage bridge 1
output voltage bridge 1
output voltage bridge 2
7 GND2 ground 2
8 GND1 ground 1
handbook, halfpage
pin 1
index
Fig.1 Simplified outline SOT96-1.
58
x
y
41
MGD790
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
CC1
V
CC2
S sensitivity (α =0°, 45°) − 2.86 −
R
bridge
V
offset1
V
offset2
bridge supply voltage − 59V
bridge supply voltage − 59V
mV/°
bridge resistance 2 − 3kΩ
offset voltage −8 − +8 mV/V
offset voltage −8 − +8 mV/V
1998 Mar 26 2
Philips Semiconductors Product specification
Magnetic field sensor KMZ41
CIRCUIT DIAGRAM
handbook, halfpage
GND1
−V
O1
GND2
8765
1234
−V
O2
+V
V
O2
CC2
+V
V
O1
MGD789
CC1
Fig.2 Simplified circuit diagram.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
T
T
CC
tot
stg
bridge
bridge supply voltage − 12 V
total power dissipation up to T
= 130 °C − 120 mW
amb
storage temperature −65 +150 °C
bridge operating temperature −40 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient 155 K/W
1998 Mar 26 3
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