Philips KMZ11B1 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
KMZ11B1
Magnetic field sensor
Preliminary specification
Supersedes data of 1996 Nov 08
File under Discrete Semiconductors, SC17
1996 Dec 11
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ11B1
DESCRIPTION
The KMZ11B1 is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications for current and field
measurement, revolution counters, angular or linear
displacement sensors, proximity detectors, etc.
The sensor can be operated at any frequency between DC
and 1 MHz.
PINNING
PIN SYMBOL DESCRIPTION
1+V
O
output voltage
2 GND ground
3 −V
4V
O
CC
output voltage
supply voltage
5 to 8 n.c. not connected
handbook, halfpage
pin 1
index
Fig.1 Simplified outline.
58
H
y
H
x
41
MGD804
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
CC
H
y
H
x
S sensitivity − 4 −
R
bridge
V
offset
bridge supply voltage − 5 − V
magnetic field strength −2 − +2 kA/m
auxiliary field − 3 − kA/m
mV V⁄
----------------kA m⁄
bridge resistance 1.9 − 2.9 kΩ
offset voltage −1.5 − +1.5 mV/V
CIRCUIT DIAGRAM
handbook, full pagewidth
1
MLC716
432
+V
O
GND
Fig.2 Simplified circuit diagram.
1996 Dec 11 2
–V
V
O
CC
Philips Semiconductors Preliminary specification
Magnetic field sensor KMZ11B1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
T
T
CC
tot
stg
bridge
bridge supply voltage − 12 V
total power dissipation up to T
= 130 °C − 120 mW
amb
storage temperature −65 +150 °C
bridge operating temperature −40 +150 °C
150
handbook, halfpage
P
tot
(mW)
100
50
0
0
50 100 150
T ( C)
amb
Fig.3 Power derating curve.
MSA927
o
1996 Dec 11 3
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