Philips KMZ10C Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D329
KMZ10C
Magnetic field sensor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC17
1998 Mar 24
Philips Semiconductors Product specification
Magnetic field sensor KMZ10C
DESCRIPTION
The KMZ10C is a magnetic field sensor, employing the
magnetoresistive effect of thin-film permalloy. Its
properties enable this sensor to be used in a wide range of
applications for current and field measurement, revolution
counters, angular or linear position measurement and
proximity detectors, etc.
PINNING
ndbook, halfpage
H
x
H
y
PIN SYMBOL DESCRIPTION
1+V
O
output voltage
1234
MBA737
2 GND ground
3 −V
4V
O
CC
output voltage
supply voltage
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
T
H
H
CC
bridge
y
x
DC supply voltage − 5 − V
bridge operating temperature −40 − +150 °C
magnetic field strength −7.5 − +7.5 kA/m
auxiliary field − 3 − kA/m
S sensitivity − 1.5 −
R
V
bridge
offset
bridge resistance 1 − 1.8 kΩ
offset voltage −1.5 − +1.5 mV/V
CIRCUIT DIAGRAM
handbook, full pagewidth
MLC716
mV V⁄
----------------kA m⁄
1
+V
O
GND
Fig.2 Simplified circuit diagram.
1998 Mar 24 2
–V
432
V
O
CC
Philips Semiconductors Product specification
Magnetic field sensor KMZ10C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
P
tot
T
stg
T
bridge
Note
1. Maximum operating temperature of the thin-film permalloy.
DC supply voltage − 10 V
total power dissipation up to T
= 132 °C − 100 mW
amb
storage temperature note 1 −65 +150 °C
bridge operating temperature −40 +150 °C
150
handbook, halfpage
P
tot
(mW)
100
50
0
0
50 100 150
T ( C)
amb
Fig.3 Power derating curve.
MSA927
o
1998 Mar 24 3
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