Philips KMZ10B Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D329

KMZ10B

Magnetic field sensor

Product specification
Supersedes data of 1996 Nov 08
File under Discrete Semiconductors, SC17

1998 Mar 31

Philips Semiconductors Product specification

Magnetic field sensor KMZ10B

DESCRIPTION

The KMZ10B is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications for current and field
measurement, revolution counters, angular or linear
position measurement, proximity detectors, etc.

PINNING

PIN SYMBOL DESCRIPTION

1+V

O

output voltage
2 GND ground
3 −V
4V

O

CC

output voltage

supply voltage

handbook, halfpage

H

y

H

x

1234

MGD806

Fig.1 Simplified outline SOT195.

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

CC

H

y

H

x

bridge supply voltage − 512V
magnetic field strength −2 − +2 kA/m
auxiliary field − 3 − kA/m

S sensitivity − 4 −

R
V

bridge
offset

bridge resistance 1.6 − 2.6 kΩ
offset voltage −1.5 − +1.5 mV/V

CIRCUIT DIAGRAM

handbook, full pagewidth

MLC716

mV V⁄

----------------­kA m⁄

1

+V

O

GND

Fig.2 Simplified circuit diagram.

1998 Mar 31 2

–V

432

V

O

CC

Philips Semiconductors Product specification

Magnetic field sensor KMZ10B

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
P
T
T

CC
tot
stg
bridge

bridge supply voltage − 12 V
total power dissipation up to T

= 130 °C − 120 mW

amb

storage temperature −65 +150 °C
bridge operating temperature −40 +150 °C

150

handbook, halfpage

P

tot

(mW)

100

50

0

0

50 100 150

T ( C)

amb

Fig.3 Power derating curve.

MSA927

o

1998 Mar 31 3