Philips KMZ10B Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D329
KMZ10B
Magnetic field sensor
Product specification
Supersedes data of 1996 Nov 08
File under Discrete Semiconductors, SC17
1998 Mar 31
Philips Semiconductors Product specification
Magnetic field sensor KMZ10B
DESCRIPTION
The KMZ10B is a sensitive magnetic field sensor,
employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications for current and field
measurement, revolution counters, angular or linear
position measurement, proximity detectors, etc.
PINNING
PIN SYMBOL DESCRIPTION
1+V
O
output voltage
2 GND ground
3 −V
4V
O
CC
output voltage
supply voltage
handbook, halfpage
H
y
H
x
1234
MGD806
Fig.1 Simplified outline SOT195.
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
CC
H
y
H
x
bridge supply voltage − 512V
magnetic field strength −2 − +2 kA/m
auxiliary field − 3 − kA/m
S sensitivity − 4 −
R
V
bridge
offset
bridge resistance 1.6 − 2.6 kΩ
offset voltage −1.5 − +1.5 mV/V
CIRCUIT DIAGRAM
handbook, full pagewidth
MLC716
mV V⁄
----------------kA m⁄
1
+V
O
GND
Fig.2 Simplified circuit diagram.
1998 Mar 31 2
–V
432
V
O
CC
Philips Semiconductors Product specification
Magnetic field sensor KMZ10B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
T
T
CC
tot
stg
bridge
bridge supply voltage − 12 V
total power dissipation up to T
= 130 °C − 120 mW
amb
storage temperature −65 +150 °C
bridge operating temperature −40 +150 °C
150
handbook, halfpage
P
tot
(mW)
100
50
0
0
50 100 150
T ( C)
amb
Fig.3 Power derating curve.
MSA927
o
1998 Mar 31 3
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