Philips KMZ10A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D329
KMZ10A
Magnetic field sensor
Product specification
Supersedes data of 1996 Nov 08
File under Discrete Semiconductors, SC17
1998 Mar 24
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A
DESCRIPTION
The KMZ10A is an extremely sensitive magnetic field
sensor, employing the magnetoresistive effect of thin-film
permalloy. Its properties enable this sensor to be used in a
wide range of applications for navigation, current and field
measurement, revolution counters, angular or linear
position measurement and proximity detectors, etc.
PINNING
PIN SYMBOL DESCRIPTION
1+V
O
output voltage
2 GND ground
3 −V
4V
O
CC
output voltage
supply voltage
handbook, halfpage
H
y
H
x
1234
Fig.1 Simplified outline.
MBA737
QUICK REFERENCE DATA
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
V
T
H
H
CC
bridge
y
x
bridge supply voltage − 5 − V
bridge operating temperature −40 − +150 °C
magnetic field strength −0.5 − +0.5 kA/m
auxiliary field − 0.5 − kA/m
S sensitivity − 16 −
R
V
bridge
offset
bridge resistance 0.8 − 1.6 kΩ
offset voltage −1.5 − +1.5 mV/V
CIRCUIT DIAGRAM
handbook, full pagewidth
MLC716
mV V⁄
----------------kA m⁄
1
+V
O
GND
Fig.2 Simplified circuit diagram.
1998 Mar 24 2
–V
432
V
O
CC
Philips Semiconductors Product specification
Magnetic field sensor KMZ10A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CC
P
tot
T
stg
T
bridge
Note
1. Maximum operating temperature of the thin-film permalloy.
bridge supply voltage − 9V
total power dissipation up to T
= 134 °C − 90 mW
amb
storage temperature note 1 −65 +150 °C
bridge operating temperature −40 +150 °C
150
handbook, halfpage
P
tot
(mW)
100
50
0
0
50 100 150
T ( C)
amb
Fig.3 Power derating curve.
MLC715
o
1998 Mar 24 3
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