1996 Nov 08 4
Philips Semiconductors Preliminary specification
30° and 70° angle sensor hybrids
KM110BH/2430;
KM110BH/2470
CHARACTERISTICS
T
amb
=25°C; VCC=5V; RL= 1.7 kΩ and a homogeneous magnetic field H
ext
= 100 kA/m in the sensitive layer of the
KMZ sensor, unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
α angle range: note 1
KM110BH/2430 −−15 to +15 − deg
KM110BH/2470 −−35 to +35 − deg
V
O
output voltage range:
KM110BH/2430 linear; see Fig.4 − 0.5 to 4.5 − V
KM110BH/2470 sinusoidal; see Fig.5 − 0.5to 4.5 − V
V
zero
zero point voltage α =0°−2.5 − V
V
off
zero point offset voltage: related to sinusoidal sensor
characteristic; see Fig.5
KM110BH/2430 −±25 − mV
KM110BH/2470 −±15 − mV
α
off
zero point offset angle related to hybrid edges;
see Fig.7
− 1 3 deg
S sensitivity: α =0°; note 2
KM110BH/2430 137 140 143 mV/deg
KM110BH/2470 73 74.5 76 mV/deg
P precision: −20 to +100 °C −
KM110BH/2430 0.2 0.5 deg
KM110BH/2470 0.5 1.2 deg
FL deviation of linearity: note 3
KM110BH/2430 −±1 −%⋅FS
KM110BH/2470 −− −%⋅FS
R
p
reproducibility α =0°; note 4 − <0.001 − deg
R
s
resolution α =0°; note 5 − <0.001 − deg
FH hysteresis α =0°; note 6 − <0.05 − deg
SP
max
maximum angular speed:
KM110BH/2430 − 60 − deg/ms
KM110BH/2470 − 150 − deg/ms
R
L
load resistance 1.7 −−kΩ
C
L
load capacitance −− 10 nF
Temperature coefficients (−40 to +100 °C)
TCV
zero
temperature coefficient
of zero point voltage:
KM110BH/2430 − 0.2 0.6 mV/K
KM110BH/2470 − 0.1 0.3 mV/K
TCS temperature coefficient
of sensitivity
−20 to 100 °C − 100 × 10
−6
− K
−1