Philips KM110BH-2190 Datasheet

DATA SH EET

Preliminary specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC17

1996 Nov 12

DISCRETE SEMICONDUCTORS

KM110BH/2130; KM110BH/2190

Angle sensor hybrid

1996 Nov 12 2

Philips Semiconductors Preliminary specification

Angle sensor hybrid KM110BH/2130; KM110BH/2190

DESCRIPTION

Sensor module for contactless
measurement of angular
displacements of strong magnetic
fields. The module is a ready-trimmed
(sensitivity and zero point)
combination of the magnetoresistive
sensor KMZ10B and a signal
conditioning circuit in hybrid
technology. The KM110BH/2130
delivers a linear output signal that is
proportional to the direction of the
magnetic field. The KM110BH/2190
delivers a sinusoidal signal.

For new design-ins the KM110BH/23
and KM110BH/24 modules are
recommended.

PINNING

PIN CONFIGURATION

PIN DESCRIPTION

1 ground
2V

CC

3V

O

Fig.1 Simplified outline.

page

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123

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. If pin 3 is shorted to either pin 1 or pin 2, current may flow permanently,
without damage to the device.

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

CC

DC supply voltage − 5 − V

V

O

output voltage range 0.5 − 4.5 V

α angle range

KM110BH/2130 −15 − +15 deg
KM110BH/2190 −45 − +45 deg

T

op

operating temperature −40 − +125 °C

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

supply voltage 4.5 5.5 V

I

CC

supply current − 20 mA

T

stg

storage temperature −40 +125 °C

T

op

operating temperature −40 +125 °C
output short-circuit duration permanent (see note 1)

1996 Nov 12 3

Philips Semiconductors Preliminary specification

Angle sensor hybrid KM110BH/2130; KM110BH/2190

CHARACTERISTICS

T

amb

=25°C; VCC= 5 V and a homogeneous magnetic field H

ext

= 100 kA/m in the sensitive layer of the KMZ sensor;

unless otherwise specified.

Notes

1. Refer to Fig.3. The magnetic field can be produced by using the first magnet listed in Table 1. Other magnets, along
with their required distances from the front of the KMZ sensor, are also given.

2. Valid for H

ext

= ∞. The real field strength of 100 kA/m gives a slightly higher operating angle range of ±46.5 deg.

3. The sensitivity will change slightly with +0.33% per 10% magnetic field increase if H

ext

deviates from 100 kA/m.

4. Deviation from best straight line in angle range.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

α angle range (note 1)

KM110BH/2130 −15 − +15 deg
KM110BH/2190 note 2 −45 − +45 deg

V

O

output voltage range

KM110BH/2130 linear; see Fig.4 0.5 − 4.5 V
KM110BH/2190 sinusoidal; see Fig.5 0.5 − 4.5 V

V

zero

zero point voltage α = 0 deg − 2.5 − V

V

off

zero point offset voltage

KM110BH/2130 −45 − +45 mV
KM110BH/2190 −±35 − mV

S sensitivity (note 3) α = 0 deg

KM110BH/2130 − 139 − mV/deg
KM110BH/2190 − 70 − mV/deg

FL deviation of linearity (note 4)

KM110BH/2130 −−±1 %/FS
KM110BH/2190 −−−%/FS

SP

max

maximum angular speed

KM110BH/2130 − 10 − deg/ms
KM110BH/2190 − 30 − deg/ms

R

L

load resistance 10 −−kΩ

Temperature coefficients (−40 to +85 °C)

TCV

zero

temperature coefficient of zero
point voltage

KM110BH/2130 − 0.6 − mV/K
KM110BH/2190 − 0.3 − mV/K

TCS temperature coefficient of

sensitivity

−±200 − ppm/K

1996 Nov 12 4

Philips Semiconductors Preliminary specification

Angle sensor hybrid KM110BH/2130; KM110BH/2190

Fig.2 Circuit diagram.

handbook, full pagewidth

MBB577

sensor

angle
range

temperature

compensation

current

limiter

GND

V

CC

V

O

Fig.3 Optimum magnet position relative to the sensor module.

handbook, full pagewidth

MBB576 - 1

N

S

GND

V

CC

V

O

α

reference side for α definition

d