Philips KM110BH, KM2130, KM2190 DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

KM110BH/2130; KM110BH/2190

Angle sensor hybrid

Product specification
Supersedes data of 1994 Nov 12
File under Discrete Semiconductors, SC17

1998 Mar 26

Philips Semiconductors Product specification

Angle sensor hybrid KM110BH/2130; KM110BH/2190

DESCRIPTION

Sensor module for contactless
measurement of angular
displacements of strong magnetic
fields. The module is a ready-trimmed
(sensitivity and zero point)
combination of the magnetoresistive
sensor KMZ10B and a signal
conditioning circuit in hybrid
technology. The KM110BH/2130
delivers a linear output signal that is
proportional to the direction of the
magnetic field. The KM110BH/2190
delivers a sinusoidal signal.

For new design-ins the KM110BH/23
and KM110BH/24 modules are
recommended.

PINNING

PIN DESCRIPTION

1 ground
2V
3V

CC
O

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

V

CC

V

O

DC supply voltage − 5 − V
output voltage range 0.5 − 4.5 V

α angle range

KM110BH/2130 −15 − +15 deg
KM110BH/2190 −45 − +45 deg

T

op

operating temperature −40 − +125 °C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

CC

I

CC

T

stg

T

op

supply voltage 4.5 5.5 V
supply current − 20 mA
storage temperature −40 +125 °C
operating temperature −40 +125 °C
output short-circuit duration permanent (see note 1)

Note

1. If pin 3 is shorted to either pin 1 or pin 2, current may flow permanently,
without damage to the device.

PIN CONFIGURATION

page

123

Fig.1 Simplified outline.

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1998 Mar 26 2

Philips Semiconductors Product specification

Angle sensor hybrid KM110BH/2130; KM110BH/2190

CHARACTERISTICS

T

=25°C; VCC= 5 V and a homogeneous magnetic field H

amb

unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

α angle range (note 1)

KM110BH/2130 −15 − +15 deg
KM110BH/2190 note 2 −45 − +45 deg

V

O

output voltage range

KM110BH/2130 linear; see Fig.4 0.5 − 4.5 V
KM110BH/2190 sinusoidal; see Fig.5 0.5 − 4.5 V

V

zero

V

off

zero point voltage α = 0 deg − 2.5 − V
zero point offset voltage

KM110BH/2130 −45 − +45 mV
KM110BH/2190 −±35 − mV

S sensitivity (note 3) α = 0 deg

KM110BH/2130 − 139 − mV/deg
KM110BH/2190 − 70 − mV/deg

FL deviation of linearity (note 4)

KM110BH/2130 −−±1 %/FS
KM110BH/2190 −−−%/FS

SP

max

maximum angular speed

KM110BH/2130 − 10 − deg/ms
KM110BH/2190 − 30 − deg/ms

R

L

load resistance 10 −−kΩ

Temperature coefficients (−40 to +85 °C)

TCV

zero

temperature coefficient of zero
point voltage

KM110BH/2130 − 0.6 − mV/K
KM110BH/2190 − 0.3 − mV/K

TCS temperature coefficient of

sensitivity

= 100 kA/m in the sensitive layer of the KMZ sensor;

ext

−±200 − ppm/K

Notes

1. Refer to Fig.3. The magnetic field can be produced by using the first magnet listed in Table 1. Other magnets, along
with their required distances from the front of the KMZ sensor, are also given.

2. Valid for H

3. The sensitivity will change slightly with +0.33% per 10% magnetic field increase if H

= ∞. The real field strength of 100 kA/m gives a slightly higher operating angle range of ±46.5 deg.

ext

deviates from 100 kA/m.

ext

4. Deviation from best straight line in angle range.

1998 Mar 26 3

Philips Semiconductors Product specification

Angle sensor hybrid KM110BH/2130; KM110BH/2190

handbook, full pagewidth

sensor

angle
range

temperature

compensation

Fig.2 Circuit diagram.

current

limiter

MBB577

V

CC

V

O

GND

handbook, full pagewidth

α

GND

V

CC

V

O

reference side for α definition

N

Fig.3 Optimum magnet position relative to the sensor module.

1998 Mar 26 4

d

S

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